Faraday launches low-leakage memory with up to 90% leakage-reduction

Press release; Meiling Chen, DIGITIMES Asia Wednesday 15 July 2009 0

Faraday Technology has announced the availability of low leakage memory at UMC 90nm process, which provides up to 90% leakage reduction with no area penalty. Faraday's low leakage memory has been silicon proven via complete function verifications, targeting...

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