Samsung Electronics has begun mass producing the second generation of 10nm-class (1y-nm), 8Gb DDR4 DRAM. For use in a wide range of next-generation computing systems, the new 8Gb DDR4 features the highest performance and energy efficiency for an 8Gb DRAM chip, as well as the smallest dimensions, Samsung said. Samsung's 2nd-generation 10nm-class 8Gb DDR4 features an approximate 30% productivity gain over the company's 1st-generation 10nm-class 8Gb DDR4. In addition, the new 8Gb DDR4's performance levels and energy efficiency have been improved about 10% and 15% respectively, thanks to the use of an advanced, proprietary circuit design technology. The new 8Gb DDR4 can operate at 3,600Mbps per pin, compared to 3,200Mbps of the company's 1x-nm 8Gb DDR4. To enable these achievements, Samsung has applied new technologies, without the use of an EUV process. The innovation here includes use of a high-sensitivity cell data sensing system and a progressive "air spacer" scheme. In the cells of Samsung's 2nd-generation 10nm-class DRAM, a newly devised data sensing system enables a more accurate determination of the data stored in each cell, which leads to a significant increase in the level of circuit integration and manufacturing productivity. Samsung has finished validating its 2nd-generation 10nm-class DDR4 modules with CPU manufacturers, and next plans to work closely with its global IT customers in the development of more efficient next-generation computing systems.

Samsung Electronics has increased the production volume of its 8GB high bandwidth memory-2 (HBM2) to meet growing market needs across a wide range of applications including AI, high-performance computing (HPC), advanced graphics, network systems and enterprise servers. Samsung's 8GB HBM2 consists of eight 8Gb HBM2 dies and a buffer die at the bottom of the stack, which are all vertically interconnected by TSVs and microbumps. With each die containing over 5,000 TSVs, a single Samsung 8GB HBM2 package has over 40,000 TSVs, according to the vendor. The utilization of so many TSVs, including spares, ensures high performance, by enabling data paths to be switched to different TSVs when a delay in data transmission occurs. The HBM2 is also designed to prevent overheating beyond certain temperature to guarantee high reliability. In meeting increasing market demand, Samsung anticipates that its volume production of the 8GB HBM2 will cover more than 50% of its HBM2 production by the first half of 2018.

Asustek Computer has announced ZenFone AR, a smartphone that represents an advance in mobile virtual reality (VR) and augmented reality (AR) technologies. The vendor said it is the first smartphone that will be Tango-enabled and Daydream-ready. ZenFone AR features a Qualcomm Snapdragon 821 processor that is optimized for Tango, and 8GB of RAM. The smartphone is also equipped with a 5.7-inch WQHD Super AMOLED display and a new five-magnet speaker and is pre-installed with Android 7.0.