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NEWS TAGGED DDR4
Thursday 22 July 2021
DDR3 prices to continue double-digit growth
Niche-market DDR3 memory prices will continue to register double-digit increases in the third and fourth quarters of 2021, due mainly to supply-side constraints, according to industry...
Wednesday 14 July 2021
DRAM makers negotiating contract prices for 3Q21
DRAM makers are still negotiating contract prices for the third quarter, which are expected to rise at a slower pace, according to industry sources.
Tuesday 6 July 2021
Nanya sees 2Q21 revenue hit 11-quarter high
DRAM chipmaker Nanya Technology has reported revenue of NT$22.64 billion (US$808.9 million) for the second quarter of 2021, the highest in 11 quarters.
Monday 5 July 2021
OSATs see significant surge in 2H21 memory backend demand
Taiwan memory backend specialists are optimistic about their business prospects for the second half of the year as memory demand for handset and other consumer electronics applications...
Friday 18 June 2021
Nanya to see over 25% revenue gains in 2Q21 on rising DRAM ASPs
Nanya Technology is expected to post revenue growth of 25% or more sequentially in the second quarter of 2021, buoyed by sharp DRAM price rises, particularly for DDR3 solutions, according...
Wednesday 2 June 2021
Micron intros 176-layer NAND, 1α DRAM technology
Micron Technology has unveiled memory and storage innovations across its portfolio based on its 176-layer NAND and 1α (1-alpha) DRAM technology, as well as what the company...
Monday 24 May 2021
Memory contract prices to see double-digit gains in 3Q21
DRAM and NAND flash memory contract prices are set to register double-digit increases in the third quarter of 2021, according to industry sources.
Wednesday 5 May 2021
Rising ASPs to boost Nanya, Winbond 2Q21 revenues
Memory chip makers Nanya Technology and Winbond Electronics will see their revenues boosted by rising ASPs in the second quarter, according to industry sources.
Thursday 29 April 2021
DRAM contract prices to rise 10% in May
Contract market prices for PC- and server-use DRAM memory will rise about 10% in May alone, despite a recent slowdown in the spot market price growth, according to sources at memory...
Thursday 22 April 2021
DRAM contract prices to rise 18-23% in 2Q21, says TrendForce
DRAM contract prices are expected to rise 18-23% sequentially in the second quarter of 2021 with prices for PC- and server-use DRAM memory surging over 20%, according to TrendForce...
Monday 12 April 2021
ESMT expects gross margin to rise above 20% in 1Q21
Niche-market memory IC design house Elite Semiconductor Memory Technology (ESMT) has reported March revenue hit a record high of NT$1.91 billion (US$67.1 million), and expects its...
Monday 12 April 2021
Nanya posts profit hike in 1Q21
Taiwan-based DRAM maker Nanya Technology has reported net profit hiked 192.7% sequentially to NT$2.71 billion (US$95 million) in the first quarter of 2021. EPS for the quarter came...
Friday 26 March 2021
DRAM contract prices to rise further in 2Q21
DRAM contract prices will register a larger sequential rise in the second quarter after rising 5-10% in the first quarter, according to industry sources.
Friday 26 March 2021
Samsung develops HKMG-based DDR5 memory
Samsung Electronics has expanded its DDR5 DRAM memory portfolio with a 512GB DDR5 module based on high-K metal gate (HKMG) process technology, according to the company.
Friday 29 January 2021
Micron delivers 1α DRAM technology
Micron Technology has announced volume shipments of 1α (1-alpha) node DRAM products.
Wednesday 26 May 2021
Samsung HKMG DDR5
Samsung Electronics has expanded its DDR5 DRAM memory portfolio with a 512GB DDR5 module based on high-K metal gate (HKMG) process technology. Delivering more than twice the performance of DDR4 at up to 7,200Mbps, the new DDR5 will be capable of orchestrating the most extreme compute-hungry, high-bandwidth workloads in supercomputing, artificial intelligence (AI) and machine learning (ML), as well as data analytics applications. Samsung indicated the new DDR5 utilizes highly advanced HKMG technology that has been traditionally used in logic semiconductors. With continued scaling down of DRAM structures, the insulation layer has thinned, leading to a higher leakage current. By replacing the insulator with HKMG material, Samsung's DDR5 will be able to reduce the leakage and reach new heights in performance. This new memory will also use approximately 13% less power, making it especially suitable for datacenters where energy efficiency is becoming increasingly critical. Leveraging through-silicon via (TSV) technology, Samsung's DDR5 stacks eight layers of 16Gb DRAM chips to offer the largest capacity of 512GB. TSV was first utilized in DRAM in 2014 when Samsung introduced server modules with capacities up to 256GB.
Friday 1 June 2018
Samsung 10nm 32GB DDR4 SoDIMM
Samsung Electronics has started mass producing 32GB DDR4 memory for gaming laptops in the widely used format of small outline dual in-line memory modules (SoDIMMs). The new SoDIMMs are based on 10nm-class process technology that will allow users to enjoy enriched PC-grade computer games on the go. Using the new memory solution, PC manufacturers can build faster top-of-the-line gaming-oriented laptops with longer battery life at capacities exceeding conventional mobile workstations, while maintaining existing PC configurations, according to Samsung. Compared to Samsung's 16GB SoDIMM based on 20nm-class 8Gb DDR4, which was introduced in 2014, the new 32GB module doubles the capacity while being 11% faster and approximately 39% more energy efficient, said the vendor. With a total of 16 of Samsung's newest 16Gb DDR4 DRAM chips (eight chips each mounted on the front and back), the 32GB SoDIMM allows gaming laptops to reach speeds up to 2,666Mbps. A 64GB laptop configured with two 32GB DDR4 modules consumes less than 4.6W in active mode and less than 1.4W when idle, said Samsung. This reduces power usage by approximately 39% and over 25%, respectively, compared to today's leading gaming-oriented laptops, which are equipped with 16GB modules.
Tuesday 23 January 2018
Samsung 1ynm DDR4
Samsung Electronics has begun mass producing the second generation of 10nm-class (1y-nm), 8Gb DDR4 DRAM. For use in a wide range of next-generation computing systems, the new 8Gb DDR4 features the highest performance and energy efficiency for an 8Gb DRAM chip, as well as the smallest dimensions, Samsung said. Samsung's 2nd-generation 10nm-class 8Gb DDR4 features an approximate 30% productivity gain over the company's 1st-generation 10nm-class 8Gb DDR4. In addition, the new 8Gb DDR4's performance levels and energy efficiency have been improved about 10% and 15% respectively, thanks to the use of an advanced, proprietary circuit design technology. The new 8Gb DDR4 can operate at 3,600Mbps per pin, compared to 3,200Mbps of the company's 1x-nm 8Gb DDR4. To enable these achievements, Samsung has applied new technologies, without the use of an EUV process. The innovation here includes use of a high-sensitivity cell data sensing system and a progressive "air spacer" scheme. In the cells of Samsung's 2nd-generation 10nm-class DRAM, a newly devised data sensing system enables a more accurate determination of the data stored in each cell, which leads to a significant increase in the level of circuit integration and manufacturing productivity. Samsung has finished validating its 2nd-generation 10nm-class DDR4 modules with CPU manufacturers, and next plans to work closely with its global IT customers in the development of more efficient next-generation computing systems.
Jul 23, 10:33
Chenbro launches the RM252/RM352 series server chassis to empower small base stations deployment in telecommunications
Tuesday 13 July 2021
MOBI standards guide innovation in blockchain services for growth in smart mobility industry
Wednesday 7 July 2021
ADLINK helping manufacturers upgrade businesses with private 5G network-enabled smart manufacturing solutions
Wednesday 7 July 2021
Coretronic leverages strengths to enable smart manufacturing
TSMC dossier (8): Can China establish leadership in semiconductor sector?
Mitac sees 52-week lead time for server component deliveries
Is GF a good buy for Intel?
Chip probing houses to gain from new iPhone SE series, say sources
Intel GF buyout unlikely, sources say
Google, VW, Toyota keen to develop car operating systems
Bluetooth LBS apps getting popularity for COVID tracking, says Digitimes Research
Development of on-device AI chips for smart speakers gaining momentum
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