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NEWS TAGGED DDR4
Thursday 22 July 2021
DDR3 prices to continue double-digit growth
Niche-market DDR3 memory prices will continue to register double-digit increases in the third and fourth quarters of 2021, due mainly to supply-side constraints, according to industry...
Wednesday 14 July 2021
DRAM makers negotiating contract prices for 3Q21
DRAM makers are still negotiating contract prices for the third quarter, which are expected to rise at a slower pace, according to industry sources.
Tuesday 6 July 2021
Nanya sees 2Q21 revenue hit 11-quarter high
DRAM chipmaker Nanya Technology has reported revenue of NT$22.64 billion (US$808.9 million) for the second quarter of 2021, the highest in 11 quarters.
Monday 5 July 2021
OSATs see significant surge in 2H21 memory backend demand
Taiwan memory backend specialists are optimistic about their business prospects for the second half of the year as memory demand for handset and other consumer electronics applications...
Friday 18 June 2021
Nanya to see over 25% revenue gains in 2Q21 on rising DRAM ASPs
Nanya Technology is expected to post revenue growth of 25% or more sequentially in the second quarter of 2021, buoyed by sharp DRAM price rises, particularly for DDR3 solutions, according...
Wednesday 2 June 2021
Micron intros 176-layer NAND, 1α DRAM technology
Micron Technology has unveiled memory and storage innovations across its portfolio based on its 176-layer NAND and 1α (1-alpha) DRAM technology, as well as what the company...
Monday 24 May 2021
Memory contract prices to see double-digit gains in 3Q21
DRAM and NAND flash memory contract prices are set to register double-digit increases in the third quarter of 2021, according to industry sources.
Wednesday 5 May 2021
Rising ASPs to boost Nanya, Winbond 2Q21 revenues
Memory chip makers Nanya Technology and Winbond Electronics will see their revenues boosted by rising ASPs in the second quarter, according to industry sources.
Thursday 29 April 2021
DRAM contract prices to rise 10% in May
Contract market prices for PC- and server-use DRAM memory will rise about 10% in May alone, despite a recent slowdown in the spot market price growth, according to sources at memory...
Thursday 22 April 2021
DRAM contract prices to rise 18-23% in 2Q21, says TrendForce
DRAM contract prices are expected to rise 18-23% sequentially in the second quarter of 2021 with prices for PC- and server-use DRAM memory surging over 20%, according to TrendForce...
Monday 12 April 2021
ESMT expects gross margin to rise above 20% in 1Q21
Niche-market memory IC design house Elite Semiconductor Memory Technology (ESMT) has reported March revenue hit a record high of NT$1.91 billion (US$67.1 million), and expects its...
Monday 12 April 2021
Nanya posts profit hike in 1Q21
Taiwan-based DRAM maker Nanya Technology has reported net profit hiked 192.7% sequentially to NT$2.71 billion (US$95 million) in the first quarter of 2021. EPS for the quarter came...
Friday 26 March 2021
DRAM contract prices to rise further in 2Q21
DRAM contract prices will register a larger sequential rise in the second quarter after rising 5-10% in the first quarter, according to industry sources.
Friday 26 March 2021
Samsung develops HKMG-based DDR5 memory
Samsung Electronics has expanded its DDR5 DRAM memory portfolio with a 512GB DDR5 module based on high-K metal gate (HKMG) process technology, according to the company.
Friday 29 January 2021
Micron delivers 1α DRAM technology
Micron Technology has announced volume shipments of 1α (1-alpha) node DRAM products.
Tuesday 23 January 2018
Samsung 1ynm DDR4
Samsung Electronics has begun mass producing the second generation of 10nm-class (1y-nm), 8Gb DDR4 DRAM. For use in a wide range of next-generation computing systems, the new 8Gb DDR4 features the highest performance and energy efficiency for an 8Gb DRAM chip, as well as the smallest dimensions, Samsung said. Samsung's 2nd-generation 10nm-class 8Gb DDR4 features an approximate 30% productivity gain over the company's 1st-generation 10nm-class 8Gb DDR4. In addition, the new 8Gb DDR4's performance levels and energy efficiency have been improved about 10% and 15% respectively, thanks to the use of an advanced, proprietary circuit design technology. The new 8Gb DDR4 can operate at 3,600Mbps per pin, compared to 3,200Mbps of the company's 1x-nm 8Gb DDR4. To enable these achievements, Samsung has applied new technologies, without the use of an EUV process. The innovation here includes use of a high-sensitivity cell data sensing system and a progressive "air spacer" scheme. In the cells of Samsung's 2nd-generation 10nm-class DRAM, a newly devised data sensing system enables a more accurate determination of the data stored in each cell, which leads to a significant increase in the level of circuit integration and manufacturing productivity. Samsung has finished validating its 2nd-generation 10nm-class DDR4 modules with CPU manufacturers, and next plans to work closely with its global IT customers in the development of more efficient next-generation computing systems.