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NEWS TAGGED DRAM
Monday 18 October 2021
Commodity DRAM prices likely to fall 15-20% in 1Q22
Following peak shipments in the second and third quarters, the memory sector has entered a period of correction in the fourth quarter of 2021 that may last for 1-2 quarters, and commodity...
Wednesday 13 October 2021
Highlights of the day: DRAM to seek weaker bit gowth in 2022
DRAM will continue to see bit growth in 2022, but the growth momentum will be weaker than this year's. Device makers are already slowing down purchases of DRAM,...
Wednesday 13 October 2021
DRAM bit demand growth to decelerate in 2022
The overall DRAM bit demand is expected to surge over 15% in 2022, but the growth will be less significant compared to this year, according to industry sources.
Wednesday 13 October 2021
Samsung starts mass production of 14nm EUV DDR5 DRAM
Samsung Electronics has begun mass producing what it claims is the industry's smallest, 14nm DRAM based on extreme ultraviolet (EUV) technology. Following the company's shipment of...
Tuesday 12 October 2021
Nanya expects bit sales to contract in 4Q21
DRAM maker Nanya Technology expects its bit sales to contract in the fourth quarter of 2021, with chip ASPs likely to fall through the first quarter of next year, according to company...
Thursday 7 October 2021
Global server shipment forecast, 2022 and beyond
Large datacenter demand will remain the main growth driver for server shipments 2021 through 2026. On top of that, 5G white-box telecom datacenter demand will also spur some growth...
Wednesday 6 October 2021
Nanya September revenue hits 3-month low
DRAM chipmaker Nanya Technology saw its revenue fall 6.5% sequentially to a three-month low of NT$7.68 billion (US$274.6 million) in September 2021.
Monday 4 October 2021
NOR flash to remain tight through 2022
The supply of NOR flash memory has been relatively tight compared to that of DRAM and NAND flash memory, and is expected to remain short of demand through 2022, according to industry...
Monday 4 October 2021
Backend demand for commodity DRAM falls slightly in 4Q21
Backend service demand for commodity DRAM has dropped slightly, while that for NAND flash for enterprise SSDs and NOR flash for niche applications will stay relatively stable in the...
Friday 1 October 2021
Etron strikes deal for foundry capacity through 2023
Specialty DRAM design specialist Etron Technology has signed an agreement with Powerchip Semiconductor Manufacturing (PSMC) under which the foundry will provide it sufficient fab...
Friday 1 October 2021
Memory chipmakers under pressure to offload inventory
Memory chip vendors are increasingly under pressure to offload inventory, and have turned aggressive demanding downstream module houses to take delivery of chips starting September,...
Thursday 30 September 2021
Notebook vendors remain optimistic about 1H22
Notebook vendors including Dell and Asustek Computer remain upbeat about their shipments in the first half of 2022, and have already placed orders for next year with their chip suppliers,...
Thursday 30 September 2021
Memory contract prices may see larger drops in 1Q22
PC DRAM contract prices are expected to fall about 10% in the fourth quarter of 2021, while contract prices for NAND flash memory will see slight drops. Prices for both DRAM and NAND...
Thursday 30 September 2021
Micron 1α DRAM, 176-layer NAND process yields reach maturity
Micron Technology has seen manufacturing yield rates for its 1α (1-alpha) DRAM and 176-layer NAND process nodes reach mature levels.
Thursday 23 September 2021
DRAM contract prices to see larger-than-expected drop in 4Q21
DRAM contract prices will post a larger-than-expected drop in the fourth quarter of 2021, as spot prices have been fluctuating widely, according to market sources.
Tuesday 23 January 2018
Samsung 1ynm DDR4
Samsung Electronics has begun mass producing the second generation of 10nm-class (1y-nm), 8Gb DDR4 DRAM. For use in a wide range of next-generation computing systems, the new 8Gb DDR4 features the highest performance and energy efficiency for an 8Gb DRAM chip, as well as the smallest dimensions, Samsung said. Samsung's 2nd-generation 10nm-class 8Gb DDR4 features an approximate 30% productivity gain over the company's 1st-generation 10nm-class 8Gb DDR4. In addition, the new 8Gb DDR4's performance levels and energy efficiency have been improved about 10% and 15% respectively, thanks to the use of an advanced, proprietary circuit design technology. The new 8Gb DDR4 can operate at 3,600Mbps per pin, compared to 3,200Mbps of the company's 1x-nm 8Gb DDR4. To enable these achievements, Samsung has applied new technologies, without the use of an EUV process. The innovation here includes use of a high-sensitivity cell data sensing system and a progressive "air spacer" scheme. In the cells of Samsung's 2nd-generation 10nm-class DRAM, a newly devised data sensing system enables a more accurate determination of the data stored in each cell, which leads to a significant increase in the level of circuit integration and manufacturing productivity. Samsung has finished validating its 2nd-generation 10nm-class DDR4 modules with CPU manufacturers, and next plans to work closely with its global IT customers in the development of more efficient next-generation computing systems.