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NEWS TAGGED DRAM
Thursday 29 July 2021
DRAM, NAND flash contract prices grow modestly in 3Q21
Contract market prices for DRAM and NAND flash memory have both registered a modest 5-10% growth in the third quarter of 2021, according to industry sources.
Tuesday 27 July 2021
SK Hynix posts profit surge in 2Q21
SK Hynix has reported net profits surged 100% sequentially and 57% on year to KRW1.99 trillion (US$1.73 billion) in the second quarter of 2021.
Thursday 22 July 2021
ASML expects 35% revenue growth in 2021
ASML expects to post an around 35% revenue increase in 2021, with gross margin reaching between 51% and 52%.
Thursday 22 July 2021
DDR3 prices to continue double-digit growth
Niche-market DDR3 memory prices will continue to register double-digit increases in the third and fourth quarters of 2021, due mainly to supply-side constraints, according to industry...
Tuesday 20 July 2021
Taiwan maintains edge as largest base for IC wafer capacity, says IC Insights
As of December 2020, Taiwan led the world with 21.4% of global wafer capacity installed in that country, according to IC Insights. In second place was South Korea, which accounted...
Monday 19 July 2021
Memory channel sales in China sluggish
Memory module houses and channel distributors are less optimistic about the outlook for China's channel sales in the third quarter of 2021, despite an ongoing rally in contract market...
Friday 16 July 2021
ChipMOS, Chipbond may further raise backend quotes in 2H21
Backend houses ChipMOS Technologies and Chipbond Technology are expected to raise again their backend service quotes later in the second half of 2021, as robust demand for car-use...
Wednesday 14 July 2021
DRAM makers negotiating contract prices for 3Q21
DRAM makers are still negotiating contract prices for the third quarter, which are expected to rise at a slower pace, according to industry sources.
Monday 12 July 2021
Adata expects double-digit rise in DRAM contract prices
Memory module maker Adata Technology expects DRAM contract prices to register a double-digit sequential surge in the third quarter of 2021, with an over 15% rise in low-power DRAM...
Monday 12 July 2021
SK Hynix moves 1anm EUV DRAM process to mass production
SK Hynix has kicked off mass production of 8Gb LPDDR4 mobile DRAM chips built using 1anm EUV-based process technology, according to the company.
Monday 12 July 2021
Nanya expects DRAM prices to continue rally
DRAM contract prices, which registered a substantial increase in the second quarter of 2021, are expected to continue their rally in the third quarter, according to chipmaker Nanya...
Friday 9 July 2021
Supreme upbeat about server chip demand in 3Q21
Growth in memory chip demand for servers and data centers is poised to outperform that for handsets in the third quarter of 2021, according to Taiwan-based Supreme Electronics.
Thursday 8 July 2021
Samsung wins almost half of 1Q21 smartphone memory market, says Strategy Analytics
The global smartphone memory market generated revenue of US$11.4 billion in the first quarter of 2021, according to Strategy Analytics. Samsung led the market with a 49% revenue sh...
Wednesday 7 July 2021
Memory module makers to embrace strong 3Q21
Memory module makers are poised to embrace brisk results in the third quarter of 2021, when the supply of memory chips remains tight, according to industry sources.
Tuesday 6 July 2021
Semiconductor output value to surge over next decade, says Etron chair
The semiconductor industry will be rising in value over the next 10 years, and may break through the US$1 trillion plateau during the forecast period, according to Nicky Lu, chairman...
Tuesday 23 January 2018
Samsung 1ynm DDR4
Samsung Electronics has begun mass producing the second generation of 10nm-class (1y-nm), 8Gb DDR4 DRAM. For use in a wide range of next-generation computing systems, the new 8Gb DDR4 features the highest performance and energy efficiency for an 8Gb DRAM chip, as well as the smallest dimensions, Samsung said. Samsung's 2nd-generation 10nm-class 8Gb DDR4 features an approximate 30% productivity gain over the company's 1st-generation 10nm-class 8Gb DDR4. In addition, the new 8Gb DDR4's performance levels and energy efficiency have been improved about 10% and 15% respectively, thanks to the use of an advanced, proprietary circuit design technology. The new 8Gb DDR4 can operate at 3,600Mbps per pin, compared to 3,200Mbps of the company's 1x-nm 8Gb DDR4. To enable these achievements, Samsung has applied new technologies, without the use of an EUV process. The innovation here includes use of a high-sensitivity cell data sensing system and a progressive "air spacer" scheme. In the cells of Samsung's 2nd-generation 10nm-class DRAM, a newly devised data sensing system enables a more accurate determination of the data stored in each cell, which leads to a significant increase in the level of circuit integration and manufacturing productivity. Samsung has finished validating its 2nd-generation 10nm-class DDR4 modules with CPU manufacturers, and next plans to work closely with its global IT customers in the development of more efficient next-generation computing systems.