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NEWS TAGGED EUV
Thursday 2 December 2021
Will Samsung 3nm GAA process win over major TSMC clients?
Samsung Electronics has been actively pursuing 3nm GAA chip orders, with speculation that AMD and Qualcomm could be among the first customers of its newer foundry process technology...
Tuesday 23 November 2021
TSMC ecosystem partners see bright prospects ahead
TSMC's ecosystem partners, particularly equipment makers, are poised to embrace strong growth momentum, as the foundry will be expanding its fab capacities over the next three years,...
Monday 1 November 2021
Samsung sets to triple foundry capacity by 2026, sparking concerns about potential risks
Samsung Electronics has recently disclosed plans to triple its foundry production capacity by 2026 amid global chip shortage disrupting production in key industries from automobiles...
Friday 22 October 2021
Micron to install EUV equipment at Taiwan fabs in 2024
Micron Technology has plans to install EUV lithography tools at its Taiwan-based fabs in 2024, said Manish Bhatia, executive VP of global operations for the US memory chip vendor,...
Thursday 21 October 2021
ASML gearing up for EUV equipment boom
With Intel announcing plans to adopt ASML's high-NA EUV machines in its post-nanometer process technology that is expected to be ready for production by 2025, ASML has disclosed it...
Wednesday 13 October 2021
DRAM bit demand growth to decelerate in 2022
The overall DRAM bit demand is expected to surge over 15% in 2022, but the growth will be less significant compared to this year, according to industry sources.
Wednesday 13 October 2021
Samsung starts mass production of 14nm EUV DDR5 DRAM
Samsung Electronics has begun mass producing what it claims is the industry's smallest, 14nm DRAM based on extreme ultraviolet (EUV) technology. Following the company's shipment of...
Thursday 30 September 2021
Micron 1α DRAM, 176-layer NAND process yields reach maturity
Micron Technology has seen manufacturing yield rates for its 1α (1-alpha) DRAM and 176-layer NAND process nodes reach mature levels.
Tuesday 7 September 2021
Samsung, SK Hynix set to embrace brisk 2H21, says Digitimes Research
South Korea's top-2 memory makers Samsung Electronics and SK Hynix are optimistic about their business performances for the second half of 2021 thanks to strong memory demand for...
Wednesday 1 September 2021
ASE, PTI making progress in PLP field
ASE Technology and Powertech Technology (PTI) have both stepped up their deployments in the panel-level packaging (PLP) field, and are involved in multiple computing chip design projects,...
Wednesday 1 September 2021
Fab toolmakers optimistic about demand from TSMC
TSMC's equipment suppliers remain optimistic about demand from the foundry, which has been stepping up its pace of advanced technology development and capacity expansion, according...
Wednesday 11 August 2021
Samsung intros 5nm processor for wearables
Samsung Electronics has announced its new wearable processor, the Exynos W920. The new processor integrates an LTE modem, and is built with an advanced 5nm extreme ultra-violet (EUV)...
Friday 30 July 2021
Intel could challenge TSMC in next 5 years
If Intel is able to advance its process technology on schedule, it could regain its foundry technology leadership that has been taken by TSMC in the next five years, according to...
Tuesday 27 July 2021
Intel unveils technology roadmap to power products through 2025 and beyond
Intel has revealed the roadmap of its process and packaging innovations that will power the next wave of products through 2025 and beyond.
Thursday 22 July 2021
ASML expects 35% revenue growth in 2021
ASML expects to post an around 35% revenue increase in 2021, with gross margin reaching between 51% and 52%.
Tuesday 23 January 2018
Samsung 1ynm DDR4
Samsung Electronics has begun mass producing the second generation of 10nm-class (1y-nm), 8Gb DDR4 DRAM. For use in a wide range of next-generation computing systems, the new 8Gb DDR4 features the highest performance and energy efficiency for an 8Gb DRAM chip, as well as the smallest dimensions, Samsung said. Samsung's 2nd-generation 10nm-class 8Gb DDR4 features an approximate 30% productivity gain over the company's 1st-generation 10nm-class 8Gb DDR4. In addition, the new 8Gb DDR4's performance levels and energy efficiency have been improved about 10% and 15% respectively, thanks to the use of an advanced, proprietary circuit design technology. The new 8Gb DDR4 can operate at 3,600Mbps per pin, compared to 3,200Mbps of the company's 1x-nm 8Gb DDR4. To enable these achievements, Samsung has applied new technologies, without the use of an EUV process. The innovation here includes use of a high-sensitivity cell data sensing system and a progressive "air spacer" scheme. In the cells of Samsung's 2nd-generation 10nm-class DRAM, a newly devised data sensing system enables a more accurate determination of the data stored in each cell, which leads to a significant increase in the level of circuit integration and manufacturing productivity. Samsung has finished validating its 2nd-generation 10nm-class DDR4 modules with CPU manufacturers, and next plans to work closely with its global IT customers in the development of more efficient next-generation computing systems.