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NEWS TAGGED NAND FLASH
Tuesday 30 November 2021
Memory spot prices drop at slower pace
DRAM and NAND flash memory spot prices continue trending downward but at a slower pace, and are expected to bottom out in the first quarter of next year, according to industry sour...
Monday 29 November 2021
New IC fab projects to draw government subsidies in Japan
TSMC, Kioxia and Micron Technology are reportedly expected to receive government subsidies in Japan to support their new fabs or expansion projects locally in Japan.
Monday 29 November 2021
Global NAND flash output value surges 15% in 3Q21, says TrendForce
The global NAND flash industry generated US$18.88 billion in output value in the third quarter of 2021, up 15% sequentially. The growth was primarily driven by strong demand from...
Tuesday 23 November 2021
Chipmakers ramping up 176-layer 3D NAND output
Major NAND chip vendors are ramping up their 176-layer 3D NAND chip output in the fourth quarter of 2021, which may bring supply-side variables in the first half of next year, according...
Thursday 18 November 2021
YMTC improving 128-layer 3D NAND flash manufacturing yields
China's Yangtze Memory Technologies (YMTC) is improving yield rates for 128-layer 3D NAND flash manufacturing, and is on track to scale up its monthly output to 100,000 wafers in...
Monday 8 November 2021
Phison secures US$100 million worth of deal with major customer
Flash device controller and module manufacturer Phison Electronics has struck a contract worth US$100 million over three years with a major customer, while securing long-term supply...
Wednesday 27 October 2021
Macronix to scale up 3D NAND flash output in 2022
Macronix International expects to scale up substantially the output of its 48-layer 3D NAND flash memory in 2022, and is upbeat about its NOR flash chip prices that will continue...
Wednesday 20 October 2021
Highlights of the day: NAND flash price fall may worsen
Samsung's new NAND flash production capacity is coming, which is likely to create oversupply and exacerbate price falls...
Wednesday 20 October 2021
Samsung new NAND flash capacity coming online in 2H21 may worsen price falls
The gradual commercialization of Samsung Electronics's new production capacity for NAND flash memory in the second half of 2021 has sparked concerns among market observers about a...
Monday 18 October 2021
Commodity DRAM prices likely to fall 15-20% in 1Q22
Following peak shipments in the second and third quarters, the memory sector has entered a period of correction in the fourth quarter of 2021 that may last for 1-2 quarters, and commodity...
Monday 4 October 2021
NOR flash to remain tight through 2022
The supply of NOR flash memory has been relatively tight compared to that of DRAM and NAND flash memory, and is expected to remain short of demand through 2022, according to industry...
Monday 4 October 2021
Backend demand for commodity DRAM falls slightly in 4Q21
Backend service demand for commodity DRAM has dropped slightly, while that for NAND flash for enterprise SSDs and NOR flash for niche applications will stay relatively stable in the...
Friday 1 October 2021
Memory chipmakers under pressure to offload inventory
Memory chip vendors are increasingly under pressure to offload inventory, and have turned aggressive demanding downstream module houses to take delivery of chips starting September,...
Thursday 30 September 2021
Memory contract prices may see larger drops in 1Q22
PC DRAM contract prices are expected to fall about 10% in the fourth quarter of 2021, while contract prices for NAND flash memory will see slight drops. Prices for both DRAM and NAND...
Thursday 30 September 2021
Micron 1α DRAM, 176-layer NAND process yields reach maturity
Micron Technology has seen manufacturing yield rates for its 1α (1-alpha) DRAM and 176-layer NAND process nodes reach mature levels.
Monday 11 June 2018
Winbond W25N01JW
Winbond Electronics' W25N01JW is a high-performance, 1.8V serial NAND flash memory IC delivering a data-transfer rate of 83MB/s via a quad serial peripheral interface (QSPI). The new high-performance serial NAND technology also supports a two-chip dual quad interface which gives a maximum data transfer rate of 166MB/s. The Winbond 1.8V W25N01JW chip can replace SPI NOR flash memory in automotive applications, such as data storage for instrument clusters or the center information displays (CIDs), the company indicated. This is important for automotive OEMs because the adoption of more sophisticated graphics displays in the instrument cluster, and larger display sizes of seven inches and above in the CID, is increasing system memory requirements to capacities of 1Gbit and higher, the company continued. At these capacities, serial NAND flash has a markedly lower unit cost than that of SPI NOR flash, and occupies a smaller board area per megabit of storage capacity. The W25N01JW also meets strict automotive requirements for quality and reliability, Winbond noted. Built with single-level sell (SLC) memory technology, and implementing 1-bit error correction code (ECC) on all read and write operations, it complies with the endurance, retention and quality requirements of the AEC-Q100 standard and relevant JEDEC specs. The W25N01JW is available for sampling today in a capacity of 1Gbit. A two-chip implementation in dual-quad I/O mode provides 2Gbits of memory capacity and a maximum data transfer rate of 166MB/s. The chip is available in industrial grade and in an extended-temperature automotive grade version operating at up to 105-degrees C.