Evaluation of ruggedness across various generations of power MOSFETs and implications on in-circuit performance
Company [Friday 3 June 2011]
This paper evaluates single-pulse avalanche capacity, FBSOA, and body-diode reverse recovery ruggedness on different generations of middle-voltage MOSFETs. By pointing out the strengths and weaknesses of existing generations, this evaluation will provide knowledge that users need for properly selecting and better utilizing existing MOSFETs technology.
Categories: Semiconductor/Components, Optoelectronics/Green energy | Posted: Jun 3, 11:03 | More info