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NEWS TAGGED SK HYNIX
Thursday 21 November 2024
SK Hynix closes in on Samsung with NAND market share set to top 20%
SK Hynix's strategic focus on high-end NAND memory, coupled with rising AI-driven demand, is expected to push its annual market share above 20% in 2024, bringing it closer to industry...
Thursday 21 November 2024
SK Hynix starts mass production of world's first 321-high NAND
SK Hynix Inc. (or "the company", www.skhynix.com) announced today that it has started mass production of the world's first triple-level...
Thursday 21 November 2024
Samsung expands Suzhou packaging investments to bolster HBM competitiveness
Samsung Electronics is bolstering its HBM competitiveness through significant investments in advanced packaging. Upgrades are underway at its Cheonan facility in South Korea, and...
Wednesday 20 November 2024
SK Hynix accelerates US expansion with new packaging facility, strengthens ties with TSMC, Nvidia
SK Hynix has revealed plans to establish a new company in Indiana through its third quarter 2024 business report, marking a significant step toward building a semiconductor packaging...
Friday 15 November 2024
Trump 2.0 prompt SK Hynix and Samsung to weigh China exit plans
South Korea's semiconductor sector anticipates that Donald Trump's presidential victory could intensify restrictions on China's high-tech industries, particularly affecting the semiconductor...
Friday 15 November 2024
South Korean upstream suppliers power AI memory supply chain for Nvidia, SK Hynix
South Korea's thriving AI industry has catalyzed growth across its materials, components, and equipment sectors, particularly within the AI memory supply chain. South Korean manufacturer...
Wednesday 13 November 2024
SK Hynix's US subsidiary Solidigm introduces industry's first 122TB eSSD fit for AI applications
Solidigm, a U.S. subsidiary fully-owned by Korea's SK Hynix, and a leading provider of innovative NAND flash memory solutions, introduced today the 122TB (terabyte) Solidigm D5-P5336...
Tuesday 12 November 2024
Samsung eyes TSMC alliance to close HBM gap with SK Hynix
Nvidia is gearing up to debut its next-gen "Rubin" GPU in 2025, featuring eight HBM4 chips, with a Rubin Ultra version to follow, packing twelve. In a strategic bid to reclaim HBM...
Monday 11 November 2024
Kioxia invests in CXL memory, aims for commercialization in 2030
Kioxia has announced plans to develop next-generation memory technology, Compute Express Link (CXL), to address the growing demands of AI, with support from the Japanese government...
Friday 8 November 2024
Bolstered by US partnerships, Micron's HBM3E progress outpaces Samsung
The competition in the high bandwidth memory (HBM) market intensifies between South Korea's two major DRAM giants, Samsung Electronics (Samsung) and SK Hynix. Meanwhile, US manufacturer...
Wednesday 6 November 2024
HBM and beyond: SK Hynix deepens strategic partnership with TSMC
SK Hynix has strengthened its collaboration with TSMC, designating the foundry to manufacture its next-generation HBM4 logic die. The company's development of high-capacity Compute...
Wednesday 6 November 2024
SK Hynix reduces DDR4 production, accelerates shift to AI memory
SK Hynix plans to reduce its legacy DRAM production to 20% by the fourth quarter of 2024, responding to increased supply and pricing pressure from Chinese memory manufacturers. The...
Tuesday 5 November 2024
Nvidia's Jensen Huang requests early shipment of HBM4 from SK Hynix
Nvidia CEO Jensen Huang emphasized during a video call at the SK AI Summit in Seoul's Coex that he aims to strengthen collaboration with SK Hynix in the high bandwidth memory (HBM)...
Monday 4 November 2024
SK Hynix CEO unveils world's first 16-high HBM3E at SK AI Summit 2024
SK Hynix plans to provide samples of its 48GB, 16-layer HBM product—the industry's largest capacity and highest layer count—in the first quarter of 2025. CEO Noh-Jung...
Monday 4 November 2024
Samsung and SK Hynix heat up next-gen memory race with cryogenic etching breakthroughs
Samsung Electronics and SK Hynix are advancing next-generation memory technology with "ultra-low-temperature" etching, a technique initially applied to high-density, multi-layer NAND...