CONNECT WITH US
NEWS TAGGED EUV
Thursday 17 September 2026
20 of China's OSATs push into advanced packaging amid EUV curbs
China is broadening its advanced packaging base as restrictions on leading-edge semiconductor equipment complicate further process-node scaling. The effort now extends beyond the country's...
Thursday 17 September 2026
Exclusive: China's CAS institute charts DUV route to 3nm GAA without EUV
China's advanced semiconductor research has reached another milestone. The Institute of Microelectronics of the Chinese Academy of Sciences has established a gate-all-around (GAA)...
Wednesday 16 September 2026
Kepler bets HBM can scale without EUV — chip giants are buying in

US memory chip startup Kepler Computing has emerged from stealth after seven years, disclosing US$468 million in total funding and a...

Tuesday 15 September 2026
Samsung, SK Hynix diverge on cell design for sub-10nm DRAM in 2028

Samsung Electronics and SK Hynix are preparing to move DRAM below the 10nm threshold in 2028, with the two memory makers pursuing different...

Monday 14 September 2026
DIGITIMES Insight: High NA EUV chips near production, but economics will be the pacemaker
ASML's latest update suggests High NA EUV is no longer confined to laboratory validation. With 10 systems already operating across four customers worldwide, and three more in shipment...
Friday 11 September 2026
Samsung, SK Hynix eye 2028 High-NA DRAM rollout

SK Hynix is targeting 2028 to apply High-NA extreme ultraviolet lithography to DRAM mass production and is considering joining an industry...

Thursday 10 September 2026
Analysis: China chases EUV as chipmakers move to High-NA
The extreme ultraviolet (EUV) lithography race is splitting into two tracks. Intel has moved High-NA EUV into production, Samsung Electronics and SK Hynix are targeting DRAM production...
Tuesday 8 September 2026
ASML lines up Intel, TSMC and Samsung behind 12-inch masks — TSMC alone sets a timeline
ASML issued joint statements with Intel Foundry, TSMC and Samsung Electronics on September 8, converging the three leading-edge chipmakers on a transition from the semiconductor industry's...
Tuesday 8 September 2026
Analysis: Imec's EUV edge raises question over how far Taiwan should replicate research fab model
If Taiwan's government is determined enough, finding funding and land for the Industrial Technology Research Institute (ITRI) or the National Institutes of Applied Research (NIAR)...
Monday 7 September 2026
Naura 3D DRAM etching breakthrough could give CXMT a new path beyond EUV
China's Naura Technology has demonstrated a selective etching process for 64-layer 3D DRAM structures, potentially giving domestic memory makers another route to raise transistor density...
Friday 4 September 2026
China's EUV gap may stretch 10–15 years, but DUV gains test Western export controls
China may remain 10–15 years away from developing domestic extreme ultraviolet (EUV) lithography, according to assessments from UBS and Zeiss, highlighting the technological...
Tuesday 1 September 2026
ASML says High NA EUV has reached its first high-volume logic product
ASML told a SEMICON Taiwan audience that its High NA EUV platform has been used for a high-volume logic product for the first time, a threshold the company frames as the point at which...
Friday 21 August 2026
Samsung holds off on High-NA EUV until 1nm production
Samsung Electronics does not expect to move High-NA EUV lithography into volume production until its 1nm-class generation, a timeline that points to around 2030, after it had earlier...
Friday 14 August 2026
Korea's CNT pellicle race heats up as aweXome Ray pushes toward EUV commercialization
As South Korea's major memory manufacturers race to secure next-generation lithography technologies for increasingly advanced process nodes, the approaching High-NA EUV era is adding...
Thursday 13 August 2026
Samsung delays High-NA EUV adoption until 1nm production in 2030
Samsung Electronics plans to introduce high-numerical-aperture extreme ultraviolet (High-NA EUV) lithography into mass production at its 1nm node around 2030, according to South Korean...