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NEWS & VIEWS |
Taipei,
Sunday, November 22, 2009
20:50 (GMT+8)
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Micron 34nm MLC NAND for enterprise storage Oct 20, 10:04 Micron Technology has announced a new line of NAND products - both multi-level cell (MLC) and single-level cell (SLC) - designed specifically for enterprise applications. By leveraging its 34nm NAND process, the new MLC NAND device achieves 30,000 write cycles - a 6x increase in endurance when compared to standard MLC NAND, according to the company. The 34nm SLC NAND device also achieves 300,000 write cycles - a 3x increase in endurance when compared to standard SLC NAND. Read more |
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Intel, Micron to ship 3-bit per cell NAND flash in 4Q09 Aug 12, 10:17 Intel and Micron Technology have jointly announced the development of a new 3-bit per cell multi-level cell (MLC) NAND technology for consumer storage devices such as flash cards and USB drives, with mass production slated for the fourth quarter of 2009. Read more |
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Intel suspends shipments of 34nm SSDs Jul 31, 12:33 Intel has suspended shipments of its recently launched 34nm NAND flash-based SSDs due to the discovery of a bug that could render the drives inoperable on systems that have a password set in the BIOS, according to sources in the channel. Read more |
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DRAM maker Inotera soliciting equity investment from Intel, say sources Jul 23, 11:29 Inotera Memories, a joint venture between Micron Technology and Nanya Technology, is currently soliciting equity investment from Intel through its planned issuance of global depositary receipts (GDRs) or new shares through private placement, industry sources have claimed. Read more |
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Intel to ship 34nm SSDs Jul 22, 09:31 Intel has announced a new lineup of NAND flash-based solid state drives (SSDs) that utilize 34nm multi-level cell (MLC) NAND flash memory, and said the move to the more-advanced process will help lower prices of the SSDs by up to 60% thanks to the reduced die size and advanced engineering design. Read more |
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IM Flash lowers 32Gb NAND chip spot price, sources say Jul 20, 10:44 IM Flash Technologies, a joint venture between Intel and Micron Technology, has recently cut 32Gb NAND flash memory price to a level lower than rivals' in the spot market, according to sources at downstream memory players. IM Flash's 32Gb NAND chips are US$3 cheaper than Samsung Electronics', the sources added. Read more |
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Silicon Motion announces controllers supporting Micron 34nm MLC flash Jul 2, 11:02 Silicon Motion Technology has obtained validation for its new flash memory controllers that support Micron's 34nm multi-level cell (MLC) flash product family, according to the company. The validated Silicon Motion products include SM2682/SM2682LT SD controllers, SM2232/SM2234 CF controllers, SM2235/SM2242 SSD controllers and SM3251/SM3252 USB flash drive controllers, all of which are in mass production. Read more |
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Micron announces new 34nm NAND chip Jun 30, 15:27 Micron Technology has announced mass production of high-capacity 34nm NAND flash, which has been adopted by Lexar Media for its new flash memory cards. The new 16Gb and 32Gb NAND chips pair large capacity with performance to meet today's demanding portable storage requirements, which are tailored to end-customer product dimensions, claimed Micron. Read more |
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Micron announces support of JEDEC eMMC 4.4 in NAND portfolio Jun 11, 17:01 Micron Technology has announced support of the newly-ratified JEDEC eMMC 4.4 standard with its portfolio of managed NAND solutions for mobile applications. Designed using Micron's 34nm NAND technology, eMMC 4.4 products now offer increased security options and NAND partition management, allowing handset manufacturers to swiftly and easily transition to the new features offered in NAND. Read more |
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IM Flash likely to beat Hynix in 2009 ranking, says DRAMeXchange Apr 20, 16:00 IM Flash Technologies, a joint venture between Intel and Micron Technology, may overtake Hynix Semiconductor and become the third-largest NAND flash supplier worldwide in 2009, according to DRAMeXchange. Read more |
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Micron announces co-development with Nanya, updates 34nm NAND process Feb 12, 14:27 Micron Technology has announced that it has jointly developed a low-power DDR2 (LPDDR2) DRAM technology with Nanya Technology for mobile and consumer applications, with initial die densities up to 1Gb. The mobile LPDDR2 technology operates at 1.2 volts and provides as much as a 50% power reduction when compared to a low-power DDR chip. Read more |
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IM Flash starts 34nm NAND flash production Nov 25, 09:51 Intel and Micron Technology has announced mass production of their jointly-developed 34nm, 32 gigabit multi-level cell (MLC) NAND flash memory device. Developed and manufactured by the companies' NAND flash joint venture, IM Flash Technologies, the process technology is available on the market and enables the industry's 32Gb NAND chip that fits into a standard 48-lead thin small-outline package (TSOP). Read more |
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