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Win certified for GaAs HBT PAs, more products on the way

Max Wang, Taipei; Noah Sauve, DIGITIMES Asia Thursday 24 January 2002 0

Taiwan-based Win Semiconductor announced that its PA (power amplifier) made on 6-inch GaAs (gallium arsenide) HBT (heterojunction bipolar transistor) wafers has been certified by major IDMs in Japan. The company plans to integrate the PA into Bluetooth...

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