Winbond to hit 0.13-micron DRAM crossover next month

Hans Wu, Taipei; Jane Wang, DIGITIMES Asia Friday 16 August 2002 0

As yield rates for its 0.13-micron DRAM process fast improve, Winbond Electronics expects to reach a crossover point between 0.16-micron and 0.13-micron technology next month, said Alex Wang, corporate vice president and general manager of the company’s...

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