GaAs- and InP-based LD (laser diode) and PD (photo diode) epitaxial wafer maker LandMark Optoelectronics has reported net EPS of NT$7.22 (US$0.23) for first-half 2015.
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GaAs- and InP-based LD (laser diode) and PD (photo diode) epitaxial wafer maker LandMark Optoelectronics has reported net EPS of NT$7.22 (US$0.23) for first-half 2015.