Home Tech Semiconductors

Toshiba announces high-k/Ge gate stack technology for 16nm and beyond

Press release, June 15; Michael McManus, DIGITIMES Asia Monday 15 June 2009 0

Toshiba has announced a significant advance in the development of a gate stack and interlayer with high carrier mobility that can be applied to advanced metal-insulator-semiconductor field-effect transistors (MISFETs) in future generations of LSIs.

The article requires paid subscription. Subscribe Now

Email address

Password

Save my User ID and Password

Save my User ID and Password

Some subscribers prefer to save their log-in information so they do not have to enter their User ID and Password each time they visit the site. To activate this function, check the 'Save my User ID and Password' box in the log-in section. This will save the password on the computer you're using to access the site.

Note: If you choose to use the log-out feature, you will lose your saved information. This means you will be required to log-in the next time you visit our site.

NEW individual users please REGISTER first.

Enterprise user first-time LOGIN.

I forgot my ID and/or password?

MEMBERSHIP BENEFITS