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Thursday 14 October 2021
Power and compound fab capacity to top 10 million wafers monthly in 2023, says SEMI
Fueled by pent-up demand for automotive electronics caused by semiconductor supply chain disruptions, worldwide installed capacity for power and compound semiconductor fabs is projected...
Wednesday 13 October 2021
Taiwan backend houses gain shifted orders for MOSFETs from Southeast Asia
Taiwan-based backend houses continue to land shifted orders for MOSFET and other power ICs from Southeast Asia, where operations at fabs run by international IDMs are being disrupted...
Thursday 7 October 2021
Tongfu to raise CNY5.5 billion for capacity expansions
China-based OSAT Tongfu Microelectronics plans to raise up to CNY5.5 billion (US$854 million) to fund its upcoming capacity expansions for a variety of segments, according to industry...
Monday 27 September 2021
China stepping up development of homegrown 3rd-gen semiconductor supply chain
China with its 14th 5-year Plan (2021-2025) will be stepping up the development of the country's homegrown third-generation semiconductor industry supply chain, according to industry...
Friday 24 September 2021
IDMs step up deployments in GaN, SiC devices
IDMs including TI, Infineon, STMicroelectronics and Microchip have all stepped up their deployments in the market for power devices using GaN, SiC and other third-generation semiconductor...
Friday 17 September 2021
China stepping up deployments in homegrown car-use SiC modules
China auto and semiconductor makers are stepping up the development and production of their homegrown SiC chips and modules for EV applications, according to industry sources.
Monday 13 September 2021
IDMs, Foxconn, BYD deepening deployments in GaN, SiC devices
International IDMs, Taiwan's EMS leader Foxconn and China's semiconductor and EV vendor BYD Group are all keenly deepening their deployments in third-generation semiconductors GaN...
Tuesday 7 September 2021
IDMs migrate to 8-inch wafer fabrication for 3rd-gen semiconductors
IDMs including Infineon, Rohm and STMicroelectronics are transitioning to 8-inch wafer fabrication for third-generation semiconductors such as GaN and SiC, according to industry so...
Thursday 26 August 2021
GaN, SiC devices in growing demand, benefiting material analysis labs
As the application market for third-generation semiconductors GaN and SiC devices is on track for rapid expansion, international IDMs including Cree, Infineon, SMT Microelectronics...
Friday 20 August 2021
GF proceeds with IPO plan, likely to crush Intel's takeover bid
GlobalFoundries (GF) reportedly has quietly applied to US Securities and Exchange Commission for an IPO (initial public offering) listing on New York Stock Exchange in late 2021 or...
Friday 20 August 2021
Global light vehicle production impacts now expected well into 2022
Unlike foundries' capacity constraints impacting mainly automotive MCUs, assembly capacity constraints impact all semiconductor types including sensors, power supplies, and discretes,...
Thursday 12 August 2021
Automotive IC supply remains tight
The shortage of automotive ICs has started easing, but is unlikely to be fully relieved until the second half of 2022, according to industry sources.
Monday 9 August 2021
SiC, GaN devices to see production costs fall in next 5 years, says Infineon
Production costs for third-generation semiconductor SiC and GaN devices are expected to gradually drop to roughly the same levels as silicon-based components in the next 3-5 years,...
Thursday 29 July 2021
China MOSFET suppliers to raise prices in 4Q21
China-based MOSFET specialists including China Resources Microelectronics (CR Micro), Yangjie Electronic Technology and NCE Power are poised to raise their quotes again in the fourth...
Friday 23 July 2021
Automotive IC IDMs in talks with OSATs about demand in 2022
First-tier automotive IC IDMs in the US, Japan and Europe have reportedly approached OSATs including ASE Technology, Powertech Technology (PTI) and Greatek Electronics to book backend...
Tuesday 7 November 2017
Infineon IRPS5401
Infineon Technologies has launched the IRPS5401, a five-output point of load (POL) digital voltage regulator for FPGAs, ASICs, and other multi-rail power systems. The IRPS5401has been developed as a fully integrated PMIC solution that replaces multiple regulators with a single device in a 7mm x 7mm 56 pin QFN package. Infineon said it supports current and future applications in high density ASIC and FPGA. Additional applications comprise CPU multi-rail systems, embedded computing systems, and communication and storage systems. The IRPS5401 forms a key part of the UltraZed system on a module (SOM) from Avnet. The compact package size combined with PMBus communication for real-time monitoring and control provides the optimized power management solution that the UltraZed requires. The IRPS5401 is designed for single rail operation ranging from 5V to 12V, where most PMICs are only 5V. It has one 500mA LDO output, and four configurable switching regulator outputs, two at 2A, and two at 4A. The outputs of the IRPS5401 can be used to provide the typical rails required for core, memory, and I/O voltages. The voltage output range is between 0.5V and 3.6V for regulators A to D, and between 0.25V and 5.1V for the LDO. Switching regulator A can output up to 50A if combined with an external power stage. Switching regulators C and D can be combined to deliver 8A in a low ripple, dual-phase configuration. All outputs are well within the power requirements of most FPGAs and ASICs ranging between 10W to 50W,