As generative AI keeps driving demand for high bandwidth memory (HBM), the global DRAM market landscape is also undergoing changes, with SK Hynix's global DRAM market share exceeding...

Samsung Electronics has expanded its DDR5 DRAM memory portfolio with a 512GB DDR5 module based on high-K metal gate (HKMG) process technology, according to the company.

Samsung Electronics has announced the immediate availability of its silicon-proven 3D IC packaging technology, eXtended-Cube (X-Cube), for today's most advanced process nodes.

SK Hynix has developed HBM2E DRAM product with what it calls the industry's highest bandwidth. The new HBM2E boasts approximately 50% higher bandwidth and 100% additional capacity...

Toshiba has announced development of its BiCS flash three-dimensional (3D) flash memory utilizing through-silicon via (TSV) technology with 3-bit-per-cell (triple-level cell, TLC)...

Semiconductor equipment makers are not being discouraged by the present industry downturn. Material supplier Rohm & Haas Electronic Materials and equipment vendor KLA-Tencor have...