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Wednesday 16 November 2011
Explosive growth in next-generation power semiconductors expected, says Information Network
Traditional silicon-based power semiconductors are reaching their theoretical limitations. Fortunately because of their superior material properties, wide-bandgap power semiconductor...
Monday 28 March 2011
Powdec announces breakthrough GaN transistor design
Japan-based Powdec has announced that together with Sheffield University, they have succeeded in developing breakthrough high-voltage GaN power transistors. This was realized by creating...
Thursday 16 September 2010
Epistar and Toyoda Gosei sign cross license agreement on LED-related patents
Epistar and Toyoda Gosei have entered a cross license agreement, allowing the companies and their subsidiaries the use of each other's patents for specific technologies in Group III-V...
Wednesday 12 May 2010
Tekcore to raise fund for equipment purchase
Board of directors of Taiwan-based LED chipmaker Tekcore has decided to issue 50 million new shares worth NT$1.5 billion (US$47.38 million) to raise fund for equipment purchase.
Wednesday 31 March 2010
GaN power management IC market set for boom, says iSuppli
The gallium nitride (GaN) power management semiconductor market is expected to reach US$183.6 million in revenues in 2013, up from virtually nil in 2010, according to iSuppli. The...
Wednesday 9 September 2009
Military spending and GaN adoption driving RF power semiconductor markets, says ABI Research
Although spending on RF power semiconductors in wireless infrastructure markets has continued to stagnate, other markets - notably the military - are seeing increased activity. Also,...
Wednesday 24 September 2008
High Power Opto to acquire Aixtron MOCVD tool for production of GaN LED epiwafers
AIXTRON AG today announced that Taiwan-based High Power Opto has placed an order for one AIX 2800G4 HT MOCVD system in the second quarter of 2008. High Power Opto will receive the...