- 13 Apr 2017:It gets worse - now WD says Toshiba memory business sale breaches joint venture terms (Apr 12) - The RegisterWestern Digital has warned Toshiba that the proposed sale of its memory business contravenes the terms of their flash foundry joint venture.
- 7 Apr 2017:Macronix files new 337 complaint regarding certain non-volatile memory devices (Mar 7) - ITC 337 Law BlogThe complaint specifically refers to Toshiba flash memory chips and products containing such chips-including memory cards, solid-state drives, wearable devices, digital camcorders, mobile devices, advanced audiovisual systems, car navigation systems, computers, servers, and other consumer electronic devices-as infringing products.
- 31 Mar 2017:Toshiba shareholders agreed to split off its prized NAND flash memory unit on Thursday, paving the way for a sale to raise at least $9 billion to cover US nuclear unit charges that threaten the conglomerate's future.
- 21 Mar 2017:Samsung Electronics said Tuesday its chip factory under construction in southern Seoul is expected to start production in the first half of 2017 as scheduled. The new line is expected to focus on the production of 3-D Vertical NAND (V-NAND) flash memory.
- 13 Mar 2017:As major player Toshiba's flash memory business is up for sale, global chipmakers are weighing their chances of competing against Samsung, which has a runaway lead in 3D NAND flash technology.
- 9 Mar 2017:Hewlett Packard Enterprise said it would buy data storage provider Nimble Storage Inc for $1.09 billion in cash, to expand its presence in the fast-growing flash storage business.
- 9 Feb 2017:Toshiba wants investment funds including Bain Capital to buy a stake in its flash memory business rather than industry peers such as Micron Technology because doing so will speed up the planned sale, a source said.
- 14 Jan 2017:A non-volatile memory technology based on carbon nanotubes that's poised for commercialization in 2018 is expected to be more disruptive to enterprise storage, servers and consumer electronics than flash memory, according to a new report from BCC Research.
- 30 Dec 2016:Samsung Electronics plans to mass produce 64-layer NAND flash memory for the first time in the world early in 2017, while SK hynix plans to mass produce 72-layer NAND flash in the second half of 2017 jumping over 64-layer NAND flash.
- 26 Dec 2016:SK Hynix, one of South Korea's leading manufacturers of memory semiconductors, plans to leapfrog rival Samsung Electronics to mass produce the most-advanced generation of NAND flash - chips that feature 72 layers of data-storing cells.
- 21 Dec 2016:In a regulatory filing with the Financial Supervisory Service, SK Hynix said, "We are looking into various options, including setting up a joint venture with Seagate Technology, to strengthen the mid and long-term competitiveness of our nonvolatile storage flash chips. But no decision has yet been made."
- 20 Dec 2016:Samsung was Apple's main supplier for the iPhones from the very beginning, making the A-series processors and supplying both NAND flash and DRAM memory chips.
- 30 Sep 2016:Japan's Toshiba expects to post a bigger first-half profit than it previously forecast, boosted by rising flash memory chip prices and strong chip demand from Chinese smartphone manufacturers.
- 12 Sep 2016:Tech giant Samsung Electronics is gearing up to fully operate a production line for 3D NAND flash memory at its plant in Hwaseong City, Gyeonggi Province. Considering the one-month period to build the equipment and tools, it is expected that the facility will likely be in full operation around the end of 2016.
- 21 Jul 2016:Toshiba is planning to start the manufacturing of the world's first 64-layer 3D NAND flash memory chips in the third quarter of 2016 with Samsung Electronics being expected to release the same type of products in the following quarter.
- 5 Jul 2016:Report : Toshiba, Western Digital commit JPY1.5 trillion on flash memory production (Jul 4) - NASDAQ.comToshiba and US partner Western Digital will commit 1.5 trillion yen or US$14.6 billion over three years toward stepping up flash memory production at their jointly run Japanese plant, in a bid to widen global market share, Nikkei reported.
- 15 Jun 2016:The announcement comes after Korean news media reported that Samsung is planning to invest around KRW25 trillion (US$21.2 billion)- some claimed KRW2.5 trillion - to beef up its production lines for 3D NAND flash memory in Hwaseong, Gyeonggi Province.
- 28 Apr 2016:JEDEC Solid State Technology Association has announced the publication of several key updates to the Universal Flash Storage (UFS) family of standards. These include JESD220C UFS version 2.1, JESD223C UFSHCI version 2.1, JESD220-1A UFS UME version 1.1 and JESD223-1A UFSHCI UME version 1.1.
- 15 Feb 2016:Micron announced that it is shipping 2 bit per cell flash memory (MLC) and three bit per cell (TLC) 3D flash memory and that the majority of its total NAND flash output will be on 3D NAND by the second half of 2016.
- 22 Dec 2015:The video shows the phone from a few angles with a look at the innovative display as well as a lack of a physical home button and a main camera that doesn't have a flash LED.
- 22 Nov 2015:Flash DIMM technology developer Netlist has signed a five-year joint development deal with global memory leader Samsung to produce non-volatile DIMMs, giving it a lifeline from years of litigation hell against Diablo Technologies over memory channel storage IP.
- 13 Oct 2015:
- 17 Jul 2015:Altera has developed a storage reference design based on its Arria 10 SoCs, which doubles the life of NAND flash and can increase the number of program-erase cycles by up to 7X compared to current NAND flash implementations.
- 15 Jul 2015:SanDisk has shipped more than two billion microSD cards since it started commercial shipment of the technology ten years ago.
- 18 May 2015:Silicon Storage Technology and Globalfoundries announce qualification of auto grade 55nm embedded flash memory technology (May 5) - Company releaseMicrochip Technology through its Silicon Storage Technology (SST) subsidiary and Globalfoundries have announced the full qualification and availability of SST's 55nm embedded SuperFlash non-volatile memory (NVM) on Globalfoundries' 55nm Low Power Extended (LPx)/ RF enabled platform.
- 9 Mar 2015:Spansion has introduced the newest 512Mb density member of the FS-S serial NOR flash family. Spansion's FS-S family boasts the industry's fastest 1.8V serial peripheral interface (SPI) read performance at 80MBytes/s with quad DDR (Double Data Rate) at 80MHz clock speeds, 50% faster than most other high-density 1.8V SPI devices currently available.
- 22 Jan 2015:SanDisk has reported a plunge in profit for the fourth quarter, as the flash memory card maker's bottom line was weighed down by lower margins, higher operating expenses and supply constraints.
- 13 Jan 2015:SanDisk has warned of lower-than-expected results for its fourth quarter, spurring fears that a smartphone-driven surge in the memory chip market could be slowing.
- 10 Nov 2014:According to industry sources, Apple has decided to discontinue its use of triple-level cell (TLC) NAND, since the company believes that the functional defects plaguing the 64GB iPhone 6 and the 128GB iPhone 6+ stem from a problem in the controller IC of the TLC NAND flash. The controller IC in question is reportedly made by SSD maker Anobit, which was sold to Apple in 2011.
- 4 Nov 2014:As numerous reports of low read performance of the Samsung SSD 840 and 840 EVO using TLC NAND flash have surfaced on the Internet, a problem in the controller IC is considered to be the more likely cause of the defects.
- 26 Feb 2014:Toshiba develops device controller for embedded NAND flash memory module compliant with JEDEC UFS Ver.2.0 standard (February 25) - Company releaseToshiba has developed what it claims is the world's fastest device controller for embedded NAND flash memory modules compliant with the Universal Flash Storage (UFS) Ver.2.0 and UFS Unified Memory Extension (UME) Ver.1.0 standards defined by JEDEC Solid State Technology Association (JEDEC).
- 24 Feb 2014:Renesas develops 28nm embedded flash memory technology for microcontrollers (February 18) - Company releaseRenesas Electronics has developed what it claims is the industry's first 28-nanometer (nm) flash memory intellectual property (IP) for microcontrollers (MCUs) using a 28nm process technology.
- 23 Jan 2014:Flash memory card maker SanDisk has reported an increase in profits for the fourth quarter, due largely to higher revenues and strong margins.
- 16 Dec 2013:Chip companies serving the automotive industry know exactly where the next-generation MCU battle will be played out: high-performance MCUs with fast-access flash memory at 40-nanometer process.
- 27 Nov 2013:The dynamics of the solid-state state drive market are shifting, and for Abhi Talwalkar it's been a disappointing shift in 2013.
- 18 Oct 2013:SanDisk more than tripled its quarterly profit, beating analysts' estimates, after a fire at a rival chipmaker increased prices at a time when Apple and other users of its flash memory chips were launching new products.
- 23 Sep 2013:JEDEC has announced the publication of Universal Flash Storage (UFS) version 2.0, which offers performance and power saving features over the prior version of the standard.
- 25 Jul 2013:Spansion has expanded its serial peripheral interface (SPI) portfolio with the introduction of FL-1K family.
- 1 Jun 2013:
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- Digitimes Research: 4 million 9.7-inch iPad Pros to ship in 1H16
- Digitimes Research: Global all-in-one PC shipments to drop 3.9% on year in 2015
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