Huawei had had a difficult time when it installed different NAND flash chips into its strategic Smartphone called P10 during first half of 2017. Into a same product, it installed eMMC and UFS standard storage device. Unexpectedly level of dissatisfaction from consumers who purchased P10 equipped with eMMC increased heavily. Industries believe that Huawei made a bad move by failing to obtain NAND flash memories.
Everspin announced it is sampling a Gbit MRAM chip and will be in production this year with 1-2 Gbyte cards based on its 256 Mbit chip. The news at the Flash Memory Summit here marks a small but significant advance for a growing collection of persistent memories at an event focused on the still rising market for mainstream NAND.
Toshiba's board will meet on Wednesday to consider offers for its chip unit from Western Digital and Taiwan's Foxconn in addition to a bid from a consortium that was previously favorite, a source familiar with the matter said. Toshiba is scrambling to sell its flash memory unit to cover losses from its bankrupt US nuclear business Westinghouse.
Western Digital won a temporary US court order on Tuesday saying that Toshiba must allow Western Digital's employees to access databases and chip samples as part of a joint venture with Toshiba around flash memory chip plants in Japan.
It has been confirmed that SK Hynix started mass-producing 4th generation (72-layer) 3D NAND flash wafers and achieved ?˜golden yield', which had been SK Hynix's biggest obstacle. Its solution product that uses its own controller and firmware passed certifications.
VerHeul most recently was senior VP of corporate engineering at SanDisk, where he was responsible for developing a broad array of flash products.
Western Digital is considering fresh investment to build another flash memory chip plant in western Japan in an effort to show its commitment to the country, a source familiar with the matter said.
Western Digital has warned Toshiba that the proposed sale of its memory business contravenes the terms of their flash foundry joint venture.
The complaint specifically refers to Toshiba flash memory chips and products containing such chips-including memory cards, solid-state drives, wearable devices, digital camcorders, mobile devices, advanced audiovisual systems, car navigation systems, computers, servers, and other consumer electronic devices-as infringing products.
ITC 337 Law Blog
Toshiba shareholders agreed to split off its prized NAND flash memory unit on Thursday, paving the way for a sale to raise at least $9 billion to cover US nuclear unit charges that threaten the conglomerate's future.
Samsung Electronics said Tuesday its chip factory under construction in southern Seoul is expected to start production in the first half of 2017 as scheduled. The new line is expected to focus on the production of 3-D Vertical NAND (V-NAND) flash memory.
As major player Toshiba's flash memory business is up for sale, global chipmakers are weighing their chances of competing against Samsung, which has a runaway lead in 3D NAND flash technology.
Hewlett Packard Enterprise said it would buy data storage provider Nimble Storage Inc for $1.09 billion in cash, to expand its presence in the fast-growing flash storage business.
Toshiba wants investment funds including Bain Capital to buy a stake in its flash memory business rather than industry peers such as Micron Technology because doing so will speed up the planned sale, a source said.
A non-volatile memory technology based on carbon nanotubes that's poised for commercialization in 2018 is expected to be more disruptive to enterprise storage, servers and consumer electronics than flash memory, according to a new report from BCC Research.
Samsung Electronics plans to mass produce 64-layer NAND flash memory for the first time in the world early in 2017, while SK hynix plans to mass produce 72-layer NAND flash in the second half of 2017 jumping over 64-layer NAND flash.
SK Hynix, one of South Korea's leading manufacturers of memory semiconductors, plans to leapfrog rival Samsung Electronics to mass produce the most-advanced generation of NAND flash - chips that feature 72 layers of data-storing cells.
Nikkei Electronics Asia
In a regulatory filing with the Financial Supervisory Service, SK Hynix said, "We are looking into various options, including setting up a joint venture with Seagate Technology, to strengthen the mid and long-term competitiveness of our nonvolatile storage flash chips. But no decision has yet been made."
Samsung was Apple's main supplier for the iPhones from the very beginning, making the A-series processors and supplying both NAND flash and DRAM memory chips.
Japan's Toshiba expects to post a bigger first-half profit than it previously forecast, boosted by rising flash memory chip prices and strong chip demand from Chinese smartphone manufacturers.
Tech giant Samsung Electronics is gearing up to fully operate a production line for 3D NAND flash memory at its plant in Hwaseong City, Gyeonggi Province. Considering the one-month period to build the equipment and tools, it is expected that the facility will likely be in full operation around the end of 2016.
The Korea Herald
Toshiba is planning to start the manufacturing of the world's first 64-layer 3D NAND flash memory chips in the third quarter of 2016 with Samsung Electronics being expected to release the same type of products in the following quarter.
Toshiba and US partner Western Digital will commit 1.5 trillion yen or US$14.6 billion over three years toward stepping up flash memory production at their jointly run Japanese plant, in a bid to widen global market share, Nikkei reported.
The announcement comes after Korean news media reported that Samsung is planning to invest around KRW25 trillion (US$21.2 billion)- some claimed KRW2.5 trillion - to beef up its production lines for 3D NAND flash memory in Hwaseong, Gyeonggi Province.
JEDEC Solid State Technology Association has announced the publication of several key updates to the Universal Flash Storage (UFS) family of standards. These include JESD220C UFS version 2.1, JESD223C UFSHCI version 2.1, JESD220-1A UFS UME version 1.1 and JESD223-1A UFSHCI UME version 1.1.
Micron announced that it is shipping 2 bit per cell flash memory (MLC) and three bit per cell (TLC) 3D flash memory and that the majority of its total NAND flash output will be on 3D NAND by the second half of 2016.
The video shows the phone from a few angles with a look at the innovative display as well as a lack of a physical home button and a main camera that doesn't have a flash LED.
Flash DIMM technology developer Netlist has signed a five-year joint development deal with global memory leader Samsung to produce non-volatile DIMMs, giving it a lifeline from years of litigation hell against Diablo Technologies over memory channel storage IP.
Altera has developed a storage reference design based on its Arria 10 SoCs, which doubles the life of NAND flash and can increase the number of program-erase cycles by up to 7X compared to current NAND flash implementations.
SanDisk has shipped more than two billion microSD cards since it started commercial shipment of the technology ten years ago.
Microchip Technology through its Silicon Storage Technology (SST) subsidiary and Globalfoundries have announced the full qualification and availability of SST's 55nm embedded SuperFlash non-volatile memory (NVM) on Globalfoundries' 55nm Low Power Extended (LPx)/ RF enabled platform.
Spansion has introduced the newest 512Mb density member of the FS-S serial NOR flash family. Spansion's FS-S family boasts the industry's fastest 1.8V serial peripheral interface (SPI) read performance at 80MBytes/s with quad DDR (Double Data Rate) at 80MHz clock speeds, 50% faster than most other high-density 1.8V SPI devices currently available.
SanDisk has reported a plunge in profit for the fourth quarter, as the flash memory card maker's bottom line was weighed down by lower margins, higher operating expenses and supply constraints.
SanDisk has warned of lower-than-expected results for its fourth quarter, spurring fears that a smartphone-driven surge in the memory chip market could be slowing.
Wall Street Journal
According to industry sources, Apple has decided to discontinue its use of triple-level cell (TLC) NAND, since the company believes that the functional defects plaguing the 64GB iPhone 6 and the 128GB iPhone 6+ stem from a problem in the controller IC of the TLC NAND flash. The controller IC in question is reportedly made by SSD maker Anobit, which was sold to Apple in 2011.
As numerous reports of low read performance of the Samsung SSD 840 and 840 EVO using TLC NAND flash have surfaced on the Internet, a problem in the controller IC is considered to be the more likely cause of the defects.
Toshiba has developed what it claims is the world's fastest device controller for embedded NAND flash memory modules compliant with the Universal Flash Storage (UFS) Ver.2.0 and UFS Unified Memory Extension (UME) Ver.1.0 standards defined by JEDEC Solid State Technology Association (JEDEC).
Renesas Electronics has developed what it claims is the industry's first 28-nanometer (nm) flash memory intellectual property (IP) for microcontrollers (MCUs) using a 28nm process technology.
Flash memory card maker SanDisk has reported an increase in profits for the fourth quarter, due largely to higher revenues and strong margins.