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NEC Electronics America introduces heat-reducing MOSFETs
Press release, April 24; Rodney Chan, DIGITIMES

NEC Electronics America has announced the availability of two new metal-oxide-semiconductor field-effect transistor (MOSFET) families that help reduce heat generation in servers, motherboards and notebooks.

The uPA273xUT1A family is designed for use in the protection circuitry of lithium-ion (Li-Ion) batteries for notebook PCs, and is designed to help prevent heat generation and explosions that may result from Li-Ion battery overcurrent. The second, the uPA272xUT1A family, helps to power CPUs and chipsets in notebooks, desktop PCs and servers, and is designed for use in DC/DC converters, or point-of-load (POL) converters, which must provide clean and reliable power service to chipsets.

All of the new MOSFETs are housed in NEC Electronics' proprietary 8-pin HVSON package that fits into the industry-standard SOP8 (small-outline package) footprint and provides efficient heat dissipation while allowing the devices to deliver significantly more power than standard SOP8-based solutions.

"Our new, highly efficient power MOSFETs meet the industry's most stringent power requirements in high-speed computing applications by combining large current capabilities and high-speed switching performance with low on- state resistance," said Bart Ladd, general manager, standard solutions strategic business unit, NEC Electronics America. "This combined functionality delivers the performance designers demand and the peace of mind they need to be assured that heat generation is being effectively minimized."

Fabricated with a 0.25-micron process, the MOSFETs have on-resistances ranging from 2.0 to 7.7 milliohms in the uPA272xUT1A family, and from 2.6 to 3.1 milliohms in the uPA273xUT1A family. The devices also offer superior heat dissipation, allowing only 4.6 watts (W) of power. Unlike lead-frame packages, which are mounted and then covered with resin, the 8-pin HVSON package effectively prevents heat generation by connecting directly to the board, allowing heat to radiate via an exposed frame without the use of resin. As a result, 4.6W of power, approximately 80% more than existing MOSFETs, is available. Furthermore, without the need for resin, package height can be reduced to a maximum of 1mm, 40% thinner than existing MOSFETs, making it possible for designers to reduce the size of batteries in notebook computers.

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