Tokyo - (Business Wire) - Mitsubishi Electric Corporation announced today the launch of a 638-nanometer (nm) wavelength red laser diode (LD) offering an output power of 1W, the world's highest among 638nm band LDs. The ML501P73 diode is ideal for pico projectors and other portable display systems that require a high-brightness red light source. Sample shipments will begin on November 18, 2010.
Pico projectors have drawn much attention because they can be embedded in or connected to mobile systems such as cellular phones and laptop computers. LDs are widely used as light sources for these projectors for their ability to project a wider range of colors compared to lamp-based projectors. LDs deliver higher output while consuming less power than light emitting diodes (LEDs), extending battery life. LDs also enable focus-free operation because optical systems with great depth of field can be used with laser beams.
At high temperatures, the output power of red LDs with wavelengths shorter than 640 m was not sufficient for high brightness projector applications. Mitsubishi Electric utilized its unique capabilities in applying window mirror structures and epitaxial growth technology to develop an industry-leading output power of 1W at a 638-nm lasing wavelength.
Product features
1) Highest recorded output power of 1W at 638nm for micro projectors
- The product offers a pulsed output power of 1W, currently the world's highest in 638nm band
- Luminosity as a red light source exceeds 120 lumens (lm) due to lasing at short wavelength
- The product has an industry-leading electrical conversion ratio of 35% at 1W at a temperature of 25-degrees C, enabling the reduction in power consumption
2) Operational at temperatures between minus 5-degrees C and plus 40-degrees C
The product can emit 1W in pulsed output and 0.5W in continuous waves within an operating range of minus 5-degrees C to plus 40-degrees C. In the pulse condition, the duty ratio is less than 33% and the frequency is higher than 50Hz.
Other features
|
| Conditions | Typical value |
| Threshold current | CW@25-degrees C | 170mA |
| Operation current | Po=500mW, CW@25-degrees C | 660mA |
| Operation voltage | Po=500mW, CW@25-degrees C | 2.2V |
| Lasing wavelength | Po=500mW, CW@25-degrees C | 638nm |
| Operating temperatures | -5 to 100-degrees C | |
| Storage temperatures | -5 to 100-degrees C | |
| Package | 5.6nm-diameter capless package | |
Source: Company, compiled by Digitimes, November 2010
