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SiC MOSFET development: Q&A interview with Hestia Power CEO Lee Chwan-ying

Nuying Huang, Taipei; Adam Hwang, DIGITIMES Asia Monday 18 November 2019 0

SiC MOSFETs sees fast development and growing demand due to needs for high-voltage and high-power operating environment, but it is quite impossible for them to completely replace Si IGBTs (insulated gate bipolar transistors), according to Lee Chwan-ying,...

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