Onsemi has announced the availability of nine new EliteSiC power integrated modules (PIM) that enable bidirectional charging for DC ultra-fast EV chargers and energy storage systems (ESS).
With improved efficiency and simpler cooling systems, silicon carbide-based solutions can reduce sizes by up to 40% and weight by up to 52% compared to traditional silicon-based IGBT solutions. Designers will have all the critical building blocks they need to swiftly establish a dependable, efficient, and scalable network of DC fast chargers that can charge EV batteries up to 80% in as little as 15 minutes, thanks to more compact, lighter charging platforms.
To keep up with demand and guarantee drivers have fair access to public charging stations in the US, the availability of EV chargers must triple by 2025 and 8x by the end of the decade. This rapid increase in electricity consumption will strain existing electrical systems, potentially overloading them. To address this issue, bidirectional charging has emerged as a vital solution for adopting vehicle-to-grid, which allows for both regular battery charging and the ability to use an EV as an energy storage system to power your home when needed.
This approach contributes to developing a DC fast charging network and vehicle-to-grid power transfer systems, addressing access and speed by charging a vehicle faster than current methods that take hours or even days.
According to Onsemi, the company has the most extensive portfolio of PIMs, allowing designers to choose the proper PIM for power conversion stages in their DC fast charging or energy storage system applications. "To accelerate the design cycle, advanced piecewise linear electrical circuit simulation (PLECS) models through our Self-Service PLECS model Generator and application simulation with the Elite Power Simulator of this portfolio will also be made available to designers," the company said.
Onsemi also noted that the company employs die from the same wafer for each PIM to provide more consistency and reliability, eliminating the need for designers to use discrete semiconductors from different suppliers, which can result in varied performance outcomes.
