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ERSO to reap remarkable results in IGBT research and development

Carol C.Y. Hsu, Hsinchu; Liu Yi-fang, DIGITIMES Asia Monday 12 February 2001 0

The Electronics Research & Service Organization (ERSO) under Taiwan’s Industrial Technology Research Institute (ITRI) is slated to complete testing of an insulated gate bipolar transistor (IGBT), featuring a driving voltage of 600V and capable...

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