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NEWS TAGGED DRAM
Thursday 19 September 2024
Samsung and SK Hynix engage in LPCAMM battle over on-device AI
Samsung Electronics (Samsung) and SK Hynix are both preparing to mass-produce the new concept of low-power memory, LPCAMM. Experts anticipate a rapid increase in AI-enabled devices,...
Wednesday 18 September 2024
Inventory dumping threatens DDR4 memory market
DRAM contract prices are expected to increase quarterly throughout 2024. However, inventory dumping has put pressure on DDR4 due to low demand for PC and mobile phone applications,...
Monday 16 September 2024
Samsung reportedly exploring dry photoresist technology for 1c DRAM
Samsung Electronics is reportedly exploring using dry photoresist for its upcoming 6G 10nm-class DRAM (1c DRAM) to widen its lead in DRAM with its competitors, such as SK Hynix and...
Monday 16 September 2024
Weekly news roundup: Chinese LLM developers navigate US chip sanction; Huawei's triple-fold Mate XT set to launch
These are the most-read DIGITIMES Asia stories in the week of September 9 – September 13.
Friday 13 September 2024
Former Samsung executive leaks DRAM technology to China valued as high as US$3.2 billion
Former Samsung Electronics executive Jin-seok Choi was recently detained again by court order for leaking DRAM process technology to China, with over 30 additional researchers now...
Friday 13 September 2024
Samsung reportedly adjusting wafer foundry strategy as it falls increasingly behind TSMC
Samsung Electronics is reportedly considering revising its schedule and plans for its wafer foundry projects currently under construction. The Pyeongtaek 4th factory (P4) in South...
Friday 13 September 2024
China's aggressive DRAM expansion alarming South Korea's memory giants
China's leading DRAM manufacturer, Changxin Memory Technologies (CXMT), is reportedly ramping up its production. This move has raised alarm in the South Korean memory industry, potentially...
Thursday 12 September 2024
Samsung faces inevitable large-scale semiconductor reorganization as DRAM lead diminishes
Samsung Electronics (Samsung) is not only lagging in the HBM area, but its large lead in universal DRAM also shows signs of erosion, intensifying its internal sense of crisis. There...
Wednesday 11 September 2024
Samsung and SK Hynix propelled into DRAM production frenzy by AI surge amid labor crunch
Although the semiconductor industry is in a supercycle due to AI, factories of Samsung Electronics (Samsung) and SK Hynix may not be able to operate as normal due to staff shortages...
Wednesday 11 September 2024
Former Samsung and SK Hynix executive detained again for suspect of leaking DRAM technology to China
Semiconductor expert Jin-seok Choi, who was previously accused of leaking Samsung Electronics' 20nm DRAM manufacturing technology data to China and attempting to establish a "cloning...
Wednesday 4 September 2024
SK Hynix developing 16-layer HBM4 memory
SK Hynix is making significant strides in the development of 16-layer HBM4 memory, successfully demonstrating the integration of Advanced MR-MUF technology into these products. Kangwook...
Tuesday 3 September 2024
SK Hynix unveils world's first 6th-gen 10nm-class DRAM, outpacing Samsung
SK Hynix has announced the successful development of the world's first sixth-generation 10nm-class DRAM (1c DRAM), surpassing industry leader Samsung Electronics in achieving mass...
Monday 2 September 2024
Peak season fails to boost 3Q24 memory spot pricing
Even though the third quarter is the traditional peak season for consumer electronics and other end-market applications, DRAM and NAND flash memory spot prices have decreased almost...
Thursday 29 August 2024
Samsung DS division's 100-day transformation under Young Hyun Jun's leadership
August 28 marked the 100th day since Vice Chairman Young Hyun Jun was appointed as the new Head of the Device Solutions (DS) Division at Samsung Electronics. The South Korean industry's...
Thursday 29 August 2024
SK Hynix develops industry's first 1c DDR5
SK Hynix announced today that it has developed the industry's first 16Gb DDR5 built using its 1c node, the sixth generation of the 10nm process.