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NEWS TAGGED DRAM
Thursday 16 September 2021
Monolithic/heterogeneous integration to drive Silicon 4.0: Q&A with Etron chairman Nicky Lu
While global chip shortages can hardly ease in the short term and prices continue to rise further, regional semiconductor fleets are quietly taking shape as the US, EU, South Korea,...
Wednesday 15 September 2021
Global fab equipment spending to hit another record high in 2022, says SEMI
Powered by digital transformation and other secular technology trends, global semiconductor equipment investments for front end fabs in 2022 are expected to reach nearly US$100 billion...
Wednesday 15 September 2021
Kioxia debuts PCIe 4.0 storage class memory SSDs
Kioxia has announced it is sampling its FL6 Series enterprise NVMe SCM SSDs. Featuring Kioxia's SCM solution, XL-FLASH, the dual-port and PCIe 4.0-compliant FL6 Series SSDs bridge...
Monday 13 September 2021
China Big Fund stepping up investment in homegrown memory sector
More China-based memory makers will receive cash injections from the government, as China's National IC Industry Investment Fund (Big Fund) steps up its investment in the country's...
Thursday 9 September 2021
ESMT remains optimistic
Specialty DRAM IC design specialist Elite Semiconductor Memory Technology (ESMT) remains upbeat about its shipment prospects for the rest of this year, thanks to its diversified client...
Wednesday 8 September 2021
Adata expects DRAM spot prices to be stable in 4Q21
Memory module maker Adata Technology expects price stability to take place in the DRAM spot market starting the fourth quarter of 2021.
Tuesday 7 September 2021
Samsung, SK Hynix set to embrace brisk 2H21, says Digitimes Research
South Korea's top-2 memory makers Samsung Electronics and SK Hynix are optimistic about their business performances for the second half of 2021 thanks to strong memory demand for...
Tuesday 7 September 2021
Stable demand for server apps may sustain DRAM price growth
Demand for server and datacenter applications has been stable and may help sustain DRAM price growth in the fourth quarter of this year, according to industry sources.
Monday 6 September 2021
PSMC to raise foundry quotes by about 10% in 4Q21
Pure-play foundry Powerchip Semiconductor Manufacturing (PSMC) plans to initiate a further price hike of about 10% mainly for its logic IC process manufacturing, with the new pricing...
Friday 3 September 2021
DDR3 contract prices likely to drop in 4Q21
DDR3 contract prices for the fourth quarter will be under downward pressure, as spot prices have been falling recently, according to industry sources.
Tuesday 31 August 2021
DRAM spot prices falling rapidly
DRAM spot prices have fallen at a rapid pace in August, which may put contract prices for the fourth quarter under downward pressure, according to industry sources.
Wednesday 25 August 2021
Global DRAM output value climbs 26% in 2Q21, says TrendForce
The global DRAM memory industry posted US$24.11 billion in output value in the second quarter of 2021, up 26% sequentially, according to TrendForce.
Friday 20 August 2021
DRAM contract prices likely to drop 5-10% in 4Q21, says Team Group
DRAM contract prices are likely to fall 5-10% in the fourth quarter of 2021, and continue their slight drops through the second quarter of next year, according to CW Chen, president...
Monday 16 August 2021
Server DRAM prices to rise by 5-10% in 3Q21, says TrendForce
Server DRAM prices are expected to rise 5-10% sequentially in the third quarter of 2021, according to TrendForce.
Friday 13 August 2021
Winbond to generate additional output for specialty DRAM starting 4Q22
Winbond Electronics expects to kick off production for specialty DRAM memory in small volume at its new plant in Kaohsiung, southern Taiwan in the fourth quarter of 2022, according...
Tuesday 23 January 2018
Samsung 1ynm DDR4
Samsung Electronics has begun mass producing the second generation of 10nm-class (1y-nm), 8Gb DDR4 DRAM. For use in a wide range of next-generation computing systems, the new 8Gb DDR4 features the highest performance and energy efficiency for an 8Gb DRAM chip, as well as the smallest dimensions, Samsung said. Samsung's 2nd-generation 10nm-class 8Gb DDR4 features an approximate 30% productivity gain over the company's 1st-generation 10nm-class 8Gb DDR4. In addition, the new 8Gb DDR4's performance levels and energy efficiency have been improved about 10% and 15% respectively, thanks to the use of an advanced, proprietary circuit design technology. The new 8Gb DDR4 can operate at 3,600Mbps per pin, compared to 3,200Mbps of the company's 1x-nm 8Gb DDR4. To enable these achievements, Samsung has applied new technologies, without the use of an EUV process. The innovation here includes use of a high-sensitivity cell data sensing system and a progressive "air spacer" scheme. In the cells of Samsung's 2nd-generation 10nm-class DRAM, a newly devised data sensing system enables a more accurate determination of the data stored in each cell, which leads to a significant increase in the level of circuit integration and manufacturing productivity. Samsung has finished validating its 2nd-generation 10nm-class DDR4 modules with CPU manufacturers, and next plans to work closely with its global IT customers in the development of more efficient next-generation computing systems.