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NEWS TAGGED DRAM
Monday 24 February 2025
Apacer forecasts NAND and DRAM price rebound by 2Q25 amidst shifting market dynamics
Apacer CEO C.K. Chang believes that the drop in NAND Flash and DRAM prices is almost over, with little room for further declines. Prices are expected to rise in the second quarter,...
Monday 24 February 2025
Samsung to launch LPW DRAM in 2028, touted as 'mobile HBM' for on-device AI
As AI applications advance, the demand for high-performance and energy-efficient memory is growing across on-device AI, high-performance computing (HPC), and data centers. In response,...
Friday 21 February 2025
SK Hynix CEO sees greater opportunities for semiconductor industry amid DeepSeek's impact
SK Hynix CEO Noh-Jung Kwak, reflecting on the emergence of China's DeepSeek, predicts that the generative AI model will ultimately have a positive impact on the semiconductor industry...
Friday 21 February 2025
Ex-Samsung executive sentenced for alleged 18nm DRAM tech leak to CXMT
A former Samsung Electronics senior manager was sentenced to seven years in prison and fined KRW200 million (approx. US$138,820) by a South Korean court for allegedly leaking core...
Wednesday 19 February 2025
China's HBM breakthrough intensifies pressure on Samsung
China's memory industry is making remarkable progress, substantially closing the technology gap with South Korea in DRAM and NAND flash manufacturing. The country has also achieved...
Tuesday 18 February 2025
Strong fundamentals for DRAM and NAND drive memory prices to rise in 2Q25
Chip manufacturers are actively promoting price rises in the second quarter, leading to an expected rise in DRAM and NAND flash prices during this period.
Tuesday 18 February 2025
DRAM manufacturers reportedly plan to cease DDR3, DDR4 production by late 2025
The DRAM market is shifting as falling prices due to weak demand prompt top players like Samsung Electronics, SK Hynix, and Micron to adjust their strategies. These companies are...
Thursday 13 February 2025
CXMT advances to 16nm DRAM production, pushes 15nm development
ChangXin Memory Technologies (CXMT) has accelerated its next-generation DRAM development, transitioning from 17nm to 16nm process technology for its first DDR5 product, according...
Wednesday 12 February 2025
CXMT's DRAM rise: a déjà vu from South Korea's past disruption of Japanese dominance
China's ChangXin Memory Technologies (CXMT) is emerging as a formidable player in the global DRAM market, potentially challenging Samsung Electronics and SK Hynix's market dominance...
Saturday 8 February 2025
DRAM inventory woes persist, Taiwan memory faces slow January
The memory industry continues to face seasonal headwinds in early 2025, with persistent price declines. The Lunar New Year holiday has further impacted revenue, reducing working days...
Saturday 8 February 2025
SK Hynix reportedly appoints CPO Young-Sik Kim to lead Wuxi fab
SK Hynix's memory business in China faces numerous uncertainties due to the ongoing US-China conflict. Chief Production Officer (CPO) Young-Sik Kim will reportedly lead the Wuxi fab...
Tuesday 4 February 2025
Samsung DS faces challenges, with hope to recover in 2Q25
Samsung Electronics' Device Solutions (DS) division has reported weaker-than-expected earnings for the fourth quarter of 2024, grappling with a series of challenges that have raised...
Monday 3 February 2025
Key memory chip prices revert to 4Q23 levels
The memory market underwent a phase of rest and consolidation just prior to the Lunar New Year holiday. DDR5 has experienced modest price increases in recent months, while other products,...
Monday 3 February 2025
Samsung to launch enhanced HBM3E in 1Q25, doubles supply target
Samsung Electronics (Samsung) plans to release an enhanced version of HBM3E as it works to close the gap with SK Hynix in HBM supply and DRAM development. The company aims to double...
Monday 3 February 2025
Weekly news roundup: CXMT reportedly adopts 1z process for DDR5 mass production; Chinese EMS/ODM firms surpass Taiwanese rivals
These are the most-read DIGITIMES Asia stories from January 20 – January 31.
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