Samsung Electronics has expanded its DDR5 DRAM memory portfolio with a 512GB DDR5 module based on high-K metal gate (HKMG) process technology. Delivering more than twice the performance of DDR4 at up to 7,200Mbps, the new DDR5 will be capable of orchestrating the most extreme compute-hungry, high-bandwidth workloads in supercomputing, artificial intelligence (AI) and machine learning (ML), as well as data analytics applications. Samsung indicated the new DDR5 utilizes highly advanced HKMG technology that has been traditionally used in logic semiconductors. With continued scaling down of DRAM structures, the insulation layer has thinned, leading to a higher leakage current. By replacing the insulator with HKMG material, Samsung's DDR5 will be able to reduce the leakage and reach new heights in performance. This new memory will also use approximately 13% less power, making it especially suitable for datacenters where energy efficiency is becoming increasingly critical. Leveraging through-silicon via (TSV) technology, Samsung's DDR5 stacks eight layers of 16Gb DRAM chips to offer the largest capacity of 512GB. TSV was first utilized in DRAM in 2014 when Samsung introduced server modules with capacities up to 256GB.

Samsung Electronics has started mass producing 32GB DDR4 memory for gaming laptops in the widely used format of small outline dual in-line memory modules (SoDIMMs). The new SoDIMMs are based on 10nm-class process technology that will allow users to enjoy enriched PC-grade computer games on the go. Using the new memory solution, PC manufacturers can build faster top-of-the-line gaming-oriented laptops with longer battery life at capacities exceeding conventional mobile workstations, while maintaining existing PC configurations, according to Samsung. Compared to Samsung's 16GB SoDIMM based on 20nm-class 8Gb DDR4, which was introduced in 2014, the new 32GB module doubles the capacity while being 11% faster and approximately 39% more energy efficient, said the vendor. With a total of 16 of Samsung's newest 16Gb DDR4 DRAM chips (eight chips each mounted on the front and back), the 32GB SoDIMM allows gaming laptops to reach speeds up to 2,666Mbps. A 64GB laptop configured with two 32GB DDR4 modules consumes less than 4.6W in active mode and less than 1.4W when idle, said Samsung. This reduces power usage by approximately 39% and over 25%, respectively, compared to today's leading gaming-oriented laptops, which are equipped with 16GB modules.

Samsung Electronics has begun mass producing the second generation of 10nm-class (1y-nm), 8Gb DDR4 DRAM. For use in a wide range of next-generation computing systems, the new 8Gb DDR4 features the highest performance and energy efficiency for an 8Gb DRAM chip, as well as the smallest dimensions, Samsung said. Samsung's 2nd-generation 10nm-class 8Gb DDR4 features an approximate 30% productivity gain over the company's 1st-generation 10nm-class 8Gb DDR4. In addition, the new 8Gb DDR4's performance levels and energy efficiency have been improved about 10% and 15% respectively, thanks to the use of an advanced, proprietary circuit design technology. The new 8Gb DDR4 can operate at 3,600Mbps per pin, compared to 3,200Mbps of the company's 1x-nm 8Gb DDR4. To enable these achievements, Samsung has applied new technologies, without the use of an EUV process. The innovation here includes use of a high-sensitivity cell data sensing system and a progressive "air spacer" scheme. In the cells of Samsung's 2nd-generation 10nm-class DRAM, a newly devised data sensing system enables a more accurate determination of the data stored in each cell, which leads to a significant increase in the level of circuit integration and manufacturing productivity. Samsung has finished validating its 2nd-generation 10nm-class DDR4 modules with CPU manufacturers, and next plans to work closely with its global IT customers in the development of more efficient next-generation computing systems.