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NEWS TAGGED DRAM
Tuesday 5 July 2022
Asia IC50 interview with president Pei-Ing Lee: Nanya moves forward with in-house developed technology
Taiwan-based memory device maker Nanya Technology was ranked 18th in the recently released DIGITIMES 2022 Asia IC50 survey, assessing the performance of the top 50 semiconductor companies...
Monday 4 July 2022
ASML, TSMC shed lights on advanced solutions at CSTIC 2022
Heavyweight semiconductor players including sole EUV lithography equipment vendor ASML and top foundry TSMC have lately shed lights on latest front-end lithography and backend advanced...
Thursday 30 June 2022
Memory chip price drops widen
Spot market prices for DRAM and NAND flash memory chips have started falling rapidly since late June, as downstream module and device companies offload their excess inventories, according...
Friday 24 June 2022
Nanya breaks ground for new 12-inch plant
DRAM maker Nanya Technology has broken ground on its new 12-inch wafer plant designed for production capacity of 45,000 wafers monthly. The plant construction will be in three phases,...
Monday 20 June 2022
NAND flash price falls may widen to double-digit levels in 3Q22
The 2021 peak demand for NAND flash has passed, and continued downturn in consumer applications is expected to widen price falls for such memory chips to double-digit levels in the...
Friday 10 June 2022
SK Hynix to supply HBM3 DRAM to Nvidia
Nvidia has recently completed its performance evaluation of SK Hynix's HBM3 samples, according to the memory chipmaker. SK Hynix will provide HBM3 for Nvidia systems expected to ship...
Thursday 9 June 2022
PTI likely to post record 2Q22 revenue
Memory IC backend specialist Powertech Technology (PTI) is expected to see its second-quarter revenue hit a record high, according to market sources.
Wednesday 8 June 2022
Winbond, Nanya to open new fabs, boost DRAM capacity
With increasing demand for larger-capacity memory devices, Taiwan-based specialty DRAM makers are ramping up production to strive for more market share, according to industry sourc...
Wednesday 8 June 2022
AP Memory expects to grow revenues with new PSRAM in 2022
Taiwan-based AP Memory Technology, a Powerchip Technology subsidiary specializing in customized DRAM memory designs and IPs, expects robust PSRAM shipments for a wide range of IoT...
Tuesday 7 June 2022
Nanya likely to post sequential revenue decrease in 2Q22
DRAM maker Nanya Technology may see disappointing second-quarter 2022 revenue, due to constraints in its bit shipments, according to market sources.
Monday 6 June 2022
Micron disperses DRAM risks with automotive memory
Micron Technology, the world's third-largest DRAM maker, has benefited from growing demand for automotive memory, allowing it to disperse market risks, according to media reports.
Thursday 2 June 2022
DRAM spot prices continue slide
Spot market prices for DRAM memory continued to fall in May, but the price drops slowed down substantially compared to those in April, according to industry sources.
Tuesday 31 May 2022
Samsung leads in DRAM market share, Micron in technology
The latest IC Insight report shows the world's top-3 DRAM makers garnered a combined 95% global market share, with Samsung Electronics taking the lead with 44%, followed by SK Hynix...
Friday 27 May 2022
Nanya gearing up for 10nm process output ramp-up
DRAM chipmaker Nanya Technology will be ramping up its first-generation 10nm process output in the second half of 2022, according to company chairman Chia-Chau Wu.
Thursday 26 May 2022
Micron to start installing EUV fab tools at Taiwan plant at end of 2022
Micron Technology has disclosed plans to start installing EUV fab tools at its DRAM plant in Taichung, central Taiwan later this year.
Tuesday 23 January 2018
Samsung 1ynm DDR4
Samsung Electronics has begun mass producing the second generation of 10nm-class (1y-nm), 8Gb DDR4 DRAM. For use in a wide range of next-generation computing systems, the new 8Gb DDR4 features the highest performance and energy efficiency for an 8Gb DRAM chip, as well as the smallest dimensions, Samsung said. Samsung's 2nd-generation 10nm-class 8Gb DDR4 features an approximate 30% productivity gain over the company's 1st-generation 10nm-class 8Gb DDR4. In addition, the new 8Gb DDR4's performance levels and energy efficiency have been improved about 10% and 15% respectively, thanks to the use of an advanced, proprietary circuit design technology. The new 8Gb DDR4 can operate at 3,600Mbps per pin, compared to 3,200Mbps of the company's 1x-nm 8Gb DDR4. To enable these achievements, Samsung has applied new technologies, without the use of an EUV process. The innovation here includes use of a high-sensitivity cell data sensing system and a progressive "air spacer" scheme. In the cells of Samsung's 2nd-generation 10nm-class DRAM, a newly devised data sensing system enables a more accurate determination of the data stored in each cell, which leads to a significant increase in the level of circuit integration and manufacturing productivity. Samsung has finished validating its 2nd-generation 10nm-class DDR4 modules with CPU manufacturers, and next plans to work closely with its global IT customers in the development of more efficient next-generation computing systems.