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NEWS TAGGED DRAM
Wednesday 12 January 2022
Global fab equipment spending to log record high in 2022, says SEMI
Global fab equipment spending for front-end facilities is expected to rise 10% on year to a new all-time high of over US$98 billion in 2022, marking a third consecutive year of growth,...
Monday 10 January 2022
Memory module firms post strong sales in 4Q21
Adata Technology and Team Group both saw their revenues hit peak for 2021 in the fourth quarter, while strong fourth-quarter sales boosted fellow memory module company Phison Electronics'...
Thursday 6 January 2022
Specialty DRAM prices soon to stop falling
DDR3 and other specialty DRAM prices are expected to stop falling and begin to rise as early as between the end of the first quarter and the second quarter, according to industry...
Wednesday 5 January 2022
DDR4 spot prices rebounding
DDR4 spot market prices continue to rebound despite the still-sluggish end-market demand, according to industry sources.
Tuesday 4 January 2022
DDR5 key to stimulating overall DRAM bit supply growth in 2022
The overall DRAM bit supply growth is expected to decelerate in 2022, but demand for DDR5 memory could still be providing momentum, according to industry sources.
Monday 3 January 2022
Samsung reportedly mulling raising SSD quotes in 1Q22
Samsung Electronics reportedly is mulling raising quotes for its own-brand SSD products in the first quarter of 2022, while some brand vendors are reducing prices by less than 10%...
Thursday 30 December 2021
Nanya to break ground for new DRAM plant in 1H22
Nanya Technology plans to break ground for a new DRAM plant in the first half of 2022 in an effort to meet growing market demand, and expects to invest a total of NT$300 billion (US$10.86...
Thursday 30 December 2021
Micron warns of Xi'an lockdown impact on chip manufacturing
The latest COVID-induced lockdown in the Chinese city of Xi'an could disrupt operations at Micron Technology's manufacturing site locally in Xi'an, according to the US memory chip...
Thursday 30 December 2021
DRAM spot prices picking up
DRAM spot market prices have been picking up since December 2021, a bullish sign for the near-term price trend, according to industry sources.
Tuesday 28 December 2021
Specialty DRAM shortage to partially ease in 2H22
The supply of specialty DRAM memory will remain constrained in 2022, but the arrival of additional foundry capacity will partially ease the tight supply, according to Nicky Lu, chairman...
Wednesday 22 December 2021
Seventeen semiconductor companies to see 2021 revenue top US$10 billion
IC Insights has forecast that 17 companies will have worldwide semiconductor (IC and OSD - optoelectronics, sensor, and discrete) sales of more than US$10.0 billion in 2021.
Wednesday 22 December 2021
Micron sees AI, 5G and EV drive memory demand growth
Memory and storage revenue has outpaced the rest of the semiconductor industry over the last two decades, according to Sanjay Mehrotra, president and CEO for Micron Technology, who...
Wednesday 15 December 2021
Etron with in-house developed KOOLDRAM enters car industry supply chain
Etron Technology's in-house developed KOOLDRAM products are being adopted by car vendors, a milestone for its entry into the automotive sector, according to the Taiwan-based niche-market...
Wednesday 15 December 2021
SK Hynix starts shipping 24Gb DDR5 chip samples
SK Hynix has started shipping samples of 24Gb DDR5 chips, according to the company.
Tuesday 14 December 2021
China memory startup gains support from Big Fund
China's National Semiconductor Industry Investment Fund (aka the Big Fund) has made about CNY99.5 million (US$15.64 million) worth of investment in Dosilicon, which specializes in...
Tuesday 23 January 2018
Samsung 1ynm DDR4
Samsung Electronics has begun mass producing the second generation of 10nm-class (1y-nm), 8Gb DDR4 DRAM. For use in a wide range of next-generation computing systems, the new 8Gb DDR4 features the highest performance and energy efficiency for an 8Gb DRAM chip, as well as the smallest dimensions, Samsung said. Samsung's 2nd-generation 10nm-class 8Gb DDR4 features an approximate 30% productivity gain over the company's 1st-generation 10nm-class 8Gb DDR4. In addition, the new 8Gb DDR4's performance levels and energy efficiency have been improved about 10% and 15% respectively, thanks to the use of an advanced, proprietary circuit design technology. The new 8Gb DDR4 can operate at 3,600Mbps per pin, compared to 3,200Mbps of the company's 1x-nm 8Gb DDR4. To enable these achievements, Samsung has applied new technologies, without the use of an EUV process. The innovation here includes use of a high-sensitivity cell data sensing system and a progressive "air spacer" scheme. In the cells of Samsung's 2nd-generation 10nm-class DRAM, a newly devised data sensing system enables a more accurate determination of the data stored in each cell, which leads to a significant increase in the level of circuit integration and manufacturing productivity. Samsung has finished validating its 2nd-generation 10nm-class DDR4 modules with CPU manufacturers, and next plans to work closely with its global IT customers in the development of more efficient next-generation computing systems.