News tagged DRAM at DIGITIMES

NEWS TAGGED DRAM

Thursday 3 July 2025

Samsung completes development of 1c DRAM, paving way for HBM4 rollout

Samsung Electronics has successfully developed its sixth-generation DRAM, known as 1c DRAM, built using a 10nm class process. The product...

Thursday 3 July 2025

Micron tightens grip on AI memory market as Samsung certification lags

Micron Technology is stepping up its game in the competitive high-bandwidth memory (HBM) market, leveraging recent wins to boost production and capture rising demand driven by artificial...

Thursday 3 July 2025

Samsung to restart P5 fab construction after two years as AI semiconductor grows

After a two-year hiatus, Samsung Electronics is reportedly set to resume construction of its advanced semiconductor production facility, the P5 fab, located in Pyeongtaek. With continuous...

Wednesday 2 July 2025

Samsung pitches 12-stack HBM3E to Nvidia after AMD's AI accelerator win

Samsung Electronics is intensifying its push to secure a major HBM3E supply deal with Nvidia, as Device Solutions chief Jun Young-hyun visited Nvidia's Silicon Valley headquarters...

Tuesday 1 July 2025

SOCAMM 2: Samsung's silent play to upend AI memory economics

Samsung Electronics is ramping up development of its next-generation SOCAMM memory, which it sees as a potential rival to high-bandwidth memory (HBM) in terms of market opportunity...

Thursday 26 June 2025

Micron eyes US$10.7 billion in 4QFY25 on AI, HBM momentum

Micron posted record DRAM and data center revenue in the third quarter of fiscal 2025, fueled by strong HBM demand and AI-driven growth. The company expects fourth-quarter fiscal...

Thursday 26 June 2025

Micron projects record revenue, but analysts split on outlook

Micron reported a 36.6% year-over-year revenue jump to US$9.3 billion in the third quarter of fiscal 2025, fueled by strong DRAM demand and AI momentum. While some analysts view the...

Thursday 26 June 2025

Micron ships HBM4 samples to customers, anticipates DDR4 shortage after EOL notice

Micron is doubling down on HBM as a core growth driver, reporting strong momentum in its HBM3E ramp and laying out a clear roadmap for its next-generation HBM4 products.

Thursday 26 June 2025

SK Hynix expands DRAM dominance with new chip packaging plant in South Korea

SK Hynix said it plans to construct a new semiconductor backend facility in Cheongju, North Chungcheong Province, marking its seventh such plant in South Korea, as the company moves...

Wednesday 25 June 2025

China’s 618 shopping festival fails to ignite memory market as prices outpace demand

China's annual 618 mid-year shopping festival — once a bellwether of consumer strength — wrapped up with mixed results this...

Tuesday 24 June 2025

Samsung to expand 1c DRAM production in 2H25 after significant yield improvements

Samsung Electronics will begin expanding investment in sixth-generation 10nm-class DRAM (1c DRAM) production starting in the second half of 2025. Industry observers interpret this...

Monday 23 June 2025

Samsung targets HBM comeback as DRAM leadership slips to rival

Samsung Electronics wrapped up its global strategy meeting with the Device Solutions division, outlining plans to regain ground in high-bandwidth memory and foundry operations. The...

Monday 23 June 2025

Adata order visibility extends to September thanks to strong DRAM demand and long-term orders

DDR4 demand has recently surged, with memory module manufacturer Adata overwhelmed by orders. The company's current order visibility has extended through September, as customers are...

Saturday 21 June 2025

DDR4 prices spike as Nanya sells out 3Q25 output, supply chains brace for 4Q25 crunch

A global surge in demand for DDR4 memory chips is driving prices sharply higher as major DRAM manufacturers reduce legacy production and supply chain constraints push third-quarter...

Friday 20 June 2025

Samsung and SK Hynix reportedly accelerate VCT DRAM development as stepping stone to 3D DRAM

Samsung and SK Hynix are advancing vertical channel transistor (VCT) technology through 4F² DRAM prototypes as a transitional step toward 3D DRAM, while Micron is bypassing VCT...

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