Efficiency in using GaN devices, to a large extent, depends on design in circuit boards and matched use of collaborative devices, according to supply chain makers.
Third-generation gallium nitride (GaN) and silicon carbide (SiC) semiconductors are competing for use in power devices in future cars. While SiC has taken the lead thanks to Tesla,...
Taiwan-based epiwafer maker Visual Photonics Epitaxy (VPEC) has emerged as the world's top supplier of GaAs epiwafers with its market share in the segment surpassing that of British...
National Yang Ming Chiao Tung University (NYCU) has set up an Industry Academia Innovation School consisting of two institutes, with Institute of Prospective Semiconductors focusing...
China with its 14th 5-year Plan (2021-2025) will be stepping up the development of the country's homegrown third-generation semiconductor industry supply chain, according to industry...
IDMs including TI, Infineon, STMicroelectronics and Microchip have all stepped up their deployments in the market for power devices using GaN, SiC and other third-generation semiconductor...
GaAs device and foundry company Transom expects military-use radars and other defense systems to emerge as niche application outlet for GaN-on-SiC RF components and modules including...
GaN Systems has announced the signing of a comprehensive capacity agreement with BMW Group for GaN Systems' high-performance, automotive-grade GaN power transistors, which increase...
International IDMs, Taiwan's EMS leader Foxconn and China's semiconductor and EV vendor BYD Group are all keenly deepening their deployments in third-generation semiconductors GaN...
Foxconn (Hon Hai) Technology Group has disclosed that at its newly-acquired 6-inch wafer fab in Hsinchu, northern Taiwan, the company will be making SiC components and IR MEMS sensors...
As the relatively mature wire-bonding technology continues to advance, it has become fully suitable for processing automotive silicon-based IGBT modules, and SiC (silicon carbide)...
Compound semiconductors including third-generation ones GaN and SiC will play a crucial part in the emerging 6G, car-use or mobile LiDAR, and biometrics device applications, according...
IDMs including Infineon, Rohm and STMicroelectronics are transitioning to 8-inch wafer fabrication for third-generation semiconductors such as GaN and SiC, according to industry so...
As the application market for third-generation semiconductors GaN and SiC devices is on track for rapid expansion, international IDMs including Cree, Infineon, SMT Microelectronics...
Tong Hsing Electronic Industries, which supplies ceramic substrates and backend services for CMOS image sensors (CIS) and other niche ICs, has held a beam-raising ceremony for its...
