Samsung Electronics has expanded its DDR5 DRAM memory portfolio with a 512GB DDR5 module based on high-K metal gate (HKMG) process technology. Delivering more than twice the performance of DDR4 at up to 7,200Mbps, the new DDR5 will be capable of orchestrating the most extreme compute-hungry, high-bandwidth workloads in supercomputing, artificial intelligence (AI) and machine learning (ML), as well as data analytics applications. Samsung indicated the new DDR5 utilizes highly advanced HKMG technology that has been traditionally used in logic semiconductors. With continued scaling down of DRAM structures, the insulation layer has thinned, leading to a higher leakage current. By replacing the insulator with HKMG material, Samsung's DDR5 will be able to reduce the leakage and reach new heights in performance. This new memory will also use approximately 13% less power, making it especially suitable for datacenters where energy efficiency is becoming increasingly critical. Leveraging through-silicon via (TSV) technology, Samsung's DDR5 stacks eight layers of 16Gb DRAM chips to offer the largest capacity of 512GB. TSV was first utilized in DRAM in 2014 when Samsung introduced server modules with capacities up to 256GB.

Acer's Spin 5 is a convertible notebook that features slimmer designs, the latest 10th Gen Intel Core processors and Windows 10 Home. Measuring 14.9mm in thickness, the Spin 5 features a 13.5-inch 2K touch display surrounded by 7.78mm bezels, giving it an 80% screen-to-body ratio. The display's 3:2 aspect ratio adds 18% more vertical space compared to an equally wide 16:9 display.

Acer has debuted the new Spin 3 convertible notebook line that features slimmer designs, the latest 10th Gen Intel Core processors and Windows 10 Home. Featuring a 14-inch Full HD display, the new Spin 3 has a traditional 16:9 aspect ratio and 7.82mm bezels that provide a 78% screen-to-body ratio. The device weighs 1.5kg and has a thickness of 16.9mm.