Samsung Electronics has begun mass producing the second generation of 10nm-class (1y-nm), 8Gb DDR4 DRAM. For use in a wide range of next-generation computing systems, the new 8Gb DDR4 features the highest performance and energy efficiency for an 8Gb DRAM chip, as well as the smallest dimensions, Samsung said. Samsung's 2nd-generation 10nm-class 8Gb DDR4 features an approximate 30% productivity gain over the company's 1st-generation 10nm-class 8Gb DDR4. In addition, the new 8Gb DDR4's performance levels and energy efficiency have been improved about 10% and 15% respectively, thanks to the use of an advanced, proprietary circuit design technology. The new 8Gb DDR4 can operate at 3,600Mbps per pin, compared to 3,200Mbps of the company's 1x-nm 8Gb DDR4. To enable these achievements, Samsung has applied new technologies, without the use of an EUV process. The innovation here includes use of a high-sensitivity cell data sensing system and a progressive "air spacer" scheme. In the cells of Samsung's 2nd-generation 10nm-class DRAM, a newly devised data sensing system enables a more accurate determination of the data stored in each cell, which leads to a significant increase in the level of circuit integration and manufacturing productivity. Samsung has finished validating its 2nd-generation 10nm-class DDR4 modules with CPU manufacturers, and next plans to work closely with its global IT customers in the development of more efficient next-generation computing systems.

Samsung Electronics has announced that it is mass producing 12Gb LPDDR4 (low power, double data rate 4) mobile DRAM chips based on its 20nm process technology. The new LPDDR4 is expected to significantly accelerate the adoption of high-capacity mobile DRAM worldwide, Samsung indicated. The 12Gb LPDDR4 brings the largest capacity and highest speed available for a DRAM chip, the company said. Compared to the preceding 20nm-based 8Gb LPDDR4, the 12Gb version is more than 30% faster at 4,266Mbps, and is twice as fast as DDR4 DRAM for PCs, while consuming 20% less energy, Samsung claimed. Manufacturing productivity of the 12Gb LPDDR4 has been raised more than 50% over that of 20nm-class 8Gb LPDDR4, the company said. The 12Gb LPDDR4 enables 3GB or 6GB of mobile DRAM in a single package using two chips and four chips respectively, while being the only solution that can provide a 6GB LPDDR4 package, Samsung said. Based on the new 12Gb LPDDR4, the 6GB package can fit into the same space used for 3GB LPDDR4 packages currently available, the company indicated.

Intel has introduced the sixth-generation Core processor family for a range of device designs - from the ultra-mobile compute stick, to 2-in-1s and high-definition all-in-one desktops, to new mobile workstations. Built on the new Skylake microarchitecture on Intel's 14nm manufacturing process technology, the new Intel Core processors deliver up to two and a half times better performance, triple the battery life, and graphics that are 30 times better for gaming and video experiences compared to the average 5-year-old computer, the vendor said. Intel Core M processors will now include brand levels Intel Core m3, m5 and m7 processors. The Intel Compute Stick lineup expands to include a version powered by the new Intel Core M processor.