Japan's Sumitomo Metal Mining (SMM) has decided to construct a new 8-inch direct bonded SiC wafer substrate mass-production prototype line, which will be completed for March 2024...
IDMs have been promoting their integrated GaN chip solutions, and may step up outsourcing the production of such devices to satisfy growing demand, according to industry sources.
Rohm Semiconductor and Delta Electronics have entered into a strategic partnership to develop and mass produce next-generation gallium nitride (GaN) power devices, according to the...
From 2010 to 2020, Tesla set the standard for success in the electric vehicle market, but now US-based luxury battery electric vehicle (BEV) maker Lucid Motors and electric pickup...
Both third-generation semiconductor silicon carbide (SiC) power components and silicon-based insulated gate bipolar transistors (Si-based IGBT) are being used in electric vehicles...
The wide bandgap (WBG) features of third-generation semiconductors make them particularly suitable for recharging and radio frequency (RF) applications, as silicon carbide (SiC) has...
Rohm and Rohm Wako have announced a plan to build a new production facility at its manufacturing subsidiary in Malaysia, Rohm-Wako Electronics (Malaysia) to increase production capacity...
IDMs including TI, Infineon, STMicroelectronics and Microchip have all stepped up their deployments in the market for power devices using GaN, SiC and other third-generation semiconductor...
China auto and semiconductor makers are stepping up the development and production of their homegrown SiC chips and modules for EV applications, according to industry sources.
International IDMs, Taiwan's EMS leader Foxconn and China's semiconductor and EV vendor BYD Group are all keenly deepening their deployments in third-generation semiconductors GaN...
IDMs including Infineon, Rohm and STMicroelectronics are transitioning to 8-inch wafer fabrication for third-generation semiconductors such as GaN and SiC, according to industry so...
As the application market for third-generation semiconductors GaN and SiC devices is on track for rapid expansion, international IDMs including Cree, Infineon, SMT Microelectronics...
Rohm will inject a total of JPY400 billion (US$3.64 billion) into its expansion through 2025, the Japan-based chip vendor disclosed in its mid-term management plan.
Rohm recently held an opening ceremony announcing the completion of a new building at its Apollo plant in Chikugo, Japan. The facility is to enhance the company's production capacity...
Taiwan leadframe makers are likely to raise quotes for leadframes for packaging automotive chips and power modules by 5-10% to reflect increased material costs amid increasing demand...
