Samsung Electronics is aiming to produce its first samples of next-generation high-bandwidth memory (HBM4E) as early as May, with plans to deliver the chips to Nvidia after internal validation, according to Chosun Biz.
China-based Yangtze Memory Technologies Corp (YMTC) is advancing an aggressive expansion plan that could become the world's third-largest NAND maker by 2026. The company is set to begin volume production at its third fabrication plant in Wuhan in the second half of 2026.
SK Hynix is reportedly considering reducing its planned 2026 shipments of high-bandwidth memory (HBM4) to Nvidia by about 20-30%, amid delays in ramping up Nvidia's next-generation Vera Rubin platform, according to ZDNet Korea.
Samsung Electronics has begun procuring semiconductor equipment for its P4 facility in Pyeongtaek, marking the transition of its planned 1c nanometer DRAM investment into the execution phase, according to South Korean media reports.
Taiwan's exports rose to a record high in March, supported by demand for artificial intelligence (AI) and memory-related products, according to the Ministry of Finance.
As global corporations accelerate spending on artificial intelligence (AI) infrastructure, supply constraints are no longer limited to memory chips. Signs of tightening availability are now emerging in multi-layer ceramic capacitors (MLCCs), small but essential components used across a vast range of electronic systems. Lead times for these parts are lengthening across the industry, according to market data.
