Home Tech

Winbond makes 512Mbit DDR on 0.13-micron process

Hans Wu, Taipei; Noah Sauve, DIGITIMES Asia Thursday 20 December 2001 0

Winbond Electronics on December 19 announced the completion of 512Mbit SDRAM and DDR (double data rate) SDRAM using 0.13-micron process technology. It will begin sending sample products in the first quarter of 2002. Volume production should begin in...

The article requires paid subscription. Subscribe Now

Email address

Password

Save my User ID and Password

Save my User ID and Password

Some subscribers prefer to save their log-in information so they do not have to enter their User ID and Password each time they visit the site. To activate this function, check the 'Save my User ID and Password' box in the log-in section. This will save the password on the computer you're using to access the site.

Note: If you choose to use the log-out feature, you will lose your saved information. This means you will be required to log-in the next time you visit our site.

NEW individual users please REGISTER first.

Enterprise user first-time LOGIN.

I forgot my ID and/or password?

MEMBERSHIP BENEFITS

Full access to articles dating back to 2000.
Real-time access to the news as it breaks.
Access to premium content.
Full access to Tomorrow's Headlines.
Asia Supply Chain 250 dataset access.

filusch fiore kommunikations.design GmbH

BIZ FOCUS

Dec 20, 11:09

Supermicro H14 servers empower the next generation of AI workloads

MOST-READ
7 DAYS NEWS

Full list