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NEWS TAGGED NAND FLASH
Monday 19 July 2021
Memory channel sales in China sluggish
Memory module houses and channel distributors are less optimistic about the outlook for China's channel sales in the third quarter of 2021, despite an ongoing rally in contract market...
Monday 12 July 2021
Adata expects double-digit rise in DRAM contract prices
Memory module maker Adata Technology expects DRAM contract prices to register a double-digit sequential surge in the third quarter of 2021, with an over 15% rise in low-power DRAM...
Friday 9 July 2021
Phison to see revenue hit another record high in 3Q21
Phison Electronics is expected to see its revenue hit another record high in the third quarter of 2021, buoyed by rising NAND flash prices and strong SSD sales, according to market...
Friday 9 July 2021
Supreme upbeat about server chip demand in 3Q21
Growth in memory chip demand for servers and data centers is poised to outperform that for handsets in the third quarter of 2021, according to Taiwan-based Supreme Electronics.
Monday 5 July 2021
OSATs see significant surge in 2H21 memory backend demand
Taiwan memory backend specialists are optimistic about their business prospects for the second half of the year as memory demand for handset and other consumer electronics applications...
Wednesday 30 June 2021
External SSD demand for Sony PS5 to surge in 2H21
Sony will soon reveal a list of PS5-compatible external SSDs, which will be driving growth in the overall large-capacity SSD demand during the second half of 2021, according to industry...
Tuesday 29 June 2021
DRAM, NAND flash prices to rise about 10% in 3Q21
DRAM and NAND flash prices are expected to rise about 10% sequentially in the third quarter of 2021, but the price outlook for the fourth quarter is still uncertain, according to...
Monday 28 June 2021
Flash device controller suppliers see order visibility stretched
NAND flash device controller suppliers have seen order visibility stretched beyond 2022 to 2023, thanks to strong demand for notebook, Chromebook and handset applications, coupled...
Friday 25 June 2021
YMTC 128-layer 3D NAND process yield rates lower-than-expected
Yield rates for Yangtze Memory Technologies' (YMTC) 128-layer 3D NAND flash process technology remain insufficient for commercial production, according to industry sources.
Thursday 24 June 2021
Memory module houses expect limited impact from cryptomining slowdown
A substantial slowdown in cryptomining demand should only have a limited impact on the overall memory market conditions as fundamental demand remains significant, according to sources...
Wednesday 16 June 2021
IC Insights raises 2021 IC market forecast to 24% growth
IC Insights has raised its IC market growth forecast for 2021 to 24%, compared with its previous estimate of 19% growth.
Tuesday 15 June 2021
Innodisk poised to post record 2Q21 revenue
Specializing in industrial flash storage, memory module maker Innodisk is poised to see its second-quarter revenue hit a record high, according to market sources.
Wednesday 9 June 2021
DRAM contract prices to rise at slower rate in 3Q21
DRAM contract prices will rise by a slower 3-8% rate in the third quarter after registering a 18-23% rally in the second quarter, according to TrendForce.
Thursday 3 June 2021
Micron eyeing bigger share of memory profit pool
Micron Technology, a supplier of DRAM and NAND flash memory, is eyeing a bigger share of its industry's profits.
Friday 28 May 2021
NAND flash prices to rise faster than DRAM in 3Q21
Contract market prices for NAND flash memory are poised to rise faster than those for DRAM chips in the third quarter of 2021, according to industry sources.
Monday 11 June 2018
Winbond Electronics' W25N01JW is a high-performance, 1.8V serial NAND flash memory IC delivering a data-transfer rate of 83MB/s via a quad serial peripheral interface (QSPI). The new high-performance serial NAND technology also supports a two-chip dual quad interface which gives a maximum data transfer rate of 166MB/s. The Winbond 1.8V W25N01JW chip can replace SPI NOR flash memory in automotive applications, such as data storage for instrument clusters or the center information displays (CIDs), the company indicated. This is important for automotive OEMs because the adoption of more sophisticated graphics displays in the instrument cluster, and larger display sizes of seven inches and above in the CID, is increasing system memory requirements to capacities of 1Gbit and higher, the company continued. At these capacities, serial NAND flash has a markedly lower unit cost than that of SPI NOR flash, and occupies a smaller board area per megabit of storage capacity. The W25N01JW also meets strict automotive requirements for quality and reliability, Winbond noted. Built with single-level sell (SLC) memory technology, and implementing 1-bit error correction code (ECC) on all read and write operations, it complies with the endurance, retention and quality requirements of the AEC-Q100 standard and relevant JEDEC specs. The W25N01JW is available for sampling today in a capacity of 1Gbit. A two-chip implementation in dual-quad I/O mode provides 2Gbits of memory capacity and a maximum data transfer rate of 166MB/s. The chip is available in industrial grade and in an extended-temperature automotive grade version operating at up to 105-degrees C.
Thursday 8 February 2018
SK Hynix 4TB enterprise SSD
SK Hynix has announced the company completed recently the development of enterprise SATA SSDs built using its 72-layer 512Gb 3D NAND flash chips. SK Hynix combined the 72-layer 512Gb 3D NAND flash with its in-house developed firmware and controller to provide the maximum density of 4TB, and makes the most of its 72-layer 512Gb 3D NAND chips to double the biggest density of the SSD of the same size with 256Gb NAND chips. A single 4TB SSD could contain 200 UHD (Ultra-HD) movies, each of which is generally as large as approximately 20GB, according to the vendor. The new eSSD supports sequential read and write speed of up to 560MB/s and 515MB/s, respectively, and can perform 98,000 random read IOPS (input/output operations per second) and 32,000 random write IOPS. SK Hynix also improved the esSSD read latency.
Friday 11 August 2017
Samsung 1Tb V-NAND
Samsung has announced a 1Tb V-NAND chip that it expects to be available next year. Since first mentioning it in 2013, during unveiling of the industry's first 3D NAND, Samsung has been working to enable its core memory technologies to realize one terabit of capacity on a single chip using a V-NAND structure. The arrival of a 1Tb V-NAND chip next year will enable 2TB of memory in a single V-NAND package by stacking 16 1Tb dies and will represent one of the most important memory advances of the past decade. "Our new, highly advanced V-NAND technologies will offer smarter solutions for greater value by providing high data processing speeds, increased system scalability and ultra-low latency for today's most VP and head of Memory Business at Samsung Electronics. "We will continue to pioneer flash innovation by leveraging our expertise in advanced 3D-NAND memory technology to significantly enhance the way in which information-rich data is processed."
Jul 23, 10:33
Chenbro launches the RM252/RM352 series server chassis to empower small base stations deployment in telecommunications
Tuesday 13 July 2021
MOBI standards guide innovation in blockchain services for growth in smart mobility industry
Wednesday 7 July 2021
ADLINK helping manufacturers upgrade businesses with private 5G network-enabled smart manufacturing solutions
Wednesday 7 July 2021
Coretronic leverages strengths to enable smart manufacturing
TSMC dossier (8): Can China establish leadership in semiconductor sector?
Mitac sees 52-week lead time for server component deliveries
Is GF a good buy for Intel?
Chip probing houses to gain from new iPhone SE series, say sources
Intel GF buyout unlikely, sources say
Google, VW, Toyota keen to develop car operating systems
Bluetooth LBS apps getting popularity for COVID tracking, says Digitimes Research
Development of on-device AI chips for smart speakers gaining momentum
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