Samsung Electronics significantly expanded its DRAM market share in the fourth quarter of 2023, extending its lead over SK Hynix to 14 percentage points from a quarter earlier. While...
SK Hynix Inc. announced today that it has begun volume production of HBM3E, the newest AI memory product with ultra-high performance, for supply to a customer in late March. The company...
Samsung Electronics is reportedly pushing to establish an HBM development unit to increase Samsung's competitiveness in High-Bandwidth Memory (HBM). In other words, the recently formed...
Refuting a Reuters report citing five people stating that Samsung Electronics will apply Mass Reflow Molded Underfill (MR-MUF) technology, which is the process used by SK...
Players in the memory industry are fiercely competing with each other in developing the fifth-generation High Bandwidth Memory (HBM) HBM3E due to the intense demand from AI GPUs....
Against the backdrop of the emergence of protectionism, competition surrounding High Bandwidth Memory (HBM) is also heating up. Although the South Korean court has ruled to hinder...
The Artificial Intelligence (AI) frenzy intensifies the competition for High Bandwidth Memory (HBM). A South Korean court recently approved an order application by SK Hynix to prohibit...
SK Hynix Inc. is ramping up its spending on advanced chip packaging, in hopes of capturing more of the burgeoning demand for a crucial component in artificial intelligence development:...
The DRAM market demand is picking up, and Samsung Electronics and SK Hynix, which previously adopted a production reduction strategy, have recently shown signs of resuming equipment...
Samsung Electronics is reportedly promoting Molded Underfill (MUF) materials in its advanced packaging processes. Since SK Hynix has already adopted MUF technology for its High Bandwidth...
SK Hynix plans to invest KRW2 trillion ($1.5 billion) in 2024 to introduce extreme ultraviolet (EUV) lithography equipment to cope with the new generation of memory investment in...
