CONNECT WITH US

Rohm mass producing 650V GaN HEMTs

Jessie Shen, DIGITIMES Asia, Taipei 0

Credit: Rohm

ROHM Semiconductor has announced mass production of 650V gallium nitride (GaN) high-electron-mobility transistors (HEMT) optimized for a wide range of power supply systems applications. These new products are jointly developed with Ancora Semiconductors,...

The article requires paid subscription. Subscribe Now