SK Hynix Inc. announced today that it has begun volume production of HBM3E, the newest AI memory product with ultra-high performance, for supply to a customer in late March. The company...
Samsung Electronics is reportedly pushing to establish an HBM development unit to increase Samsung's competitiveness in High-Bandwidth Memory (HBM). In other words, the recently formed...
Refuting a Reuters report citing five people stating that Samsung Electronics will apply Mass Reflow Molded Underfill (MR-MUF) technology, which is the process used by SK...
Players in the memory industry are fiercely competing with each other in developing the fifth-generation High Bandwidth Memory (HBM) HBM3E due to the intense demand from AI GPUs....
Against the backdrop of the emergence of protectionism, competition surrounding High Bandwidth Memory (HBM) is also heating up. Although the South Korean court has ruled to hinder...
Samsung Electronics is reportedly promoting Molded Underfill (MUF) materials in its advanced packaging processes. Since SK Hynix has already adopted MUF technology for its High Bandwidth...
SK Hynix plans to invest KRW2 trillion ($1.5 billion) in 2024 to introduce extreme ultraviolet (EUV) lithography equipment to cope with the new generation of memory investment in...
Micron Technology has begun volume production of its HBM3E memory. Nvidia H200 Tensor Core GPUs, which will begin shipping in the second calendar quarter of 2024, will include Micron's...
