Samsung Electronics and SK Hynix will both lower their total capex for memory ICs in 2016, according to Digitimes Research. During the year, both companies will focus on migrating to 18nm process technology for the manufacture of DRAM chips and ramping up their 3D NAND flash capacities.
Combined memory capex by Samsung and SK Hynix will reach US$12 billion in 2016, down 18.4% from 2015, said Digitimes Research.
As high as 70% of Samsung's total capex for memory ICs will be used to develop its 18nm process technology for the manufacture of DRAM chips, as well as purchases of new equipment for the new node, Digitimes Research indicated.
SK Hynix will cut its capex for DRAM memory but will increase the amount for NAND flash chips. The company is looking to build new production capacity for 3D NAND flash in the second half of 2016, Digitimes Research said.
Content from this article was part of a complete Digitimes Research Chinese-language report that has not yet been translated into English. If you are interested in an English version of the report or wish to receive more information about the report, click here to contact us and we will get back to you as soon as possible. Digitimes Research also provides quarterly tracking services for market sectors such as China Smartphone, China Smartphone AP, Taiwan ICT and Taiwan FPD. Click here for more information about Digitimes Research Tracking services.
