Gallium Nitride (GaN) semiconductors, having made a strong debut with fast chargers for consumer electronics, are now finding fresh opportunities in AI servers, data centers, and most recently, robotics. The rapid expansion of generative AI has spotlighted the potential for GaN technology in various robotic applications, from LiDAR sensing systems to motor controllers and battery management systems.
Power components traditionally rely on silicon (Si), but compound semiconductors like GaN and silicon carbide (SiC) are gaining traction for their superior ability to handle high current, voltage, and frequency challenges. GaN, in particular, outperforms SiC in high-frequency applications, making it increasingly appealing for industries where efficiency and size matter.
Boosting switching frequency without compromising efficiency enhances overall system performance. GaN's compact size and high efficiency have already proven valuable in fast chargers, and its lightweight, space-saving properties make it a compelling choice for mobile robots.
Global players like Infineon, Transphorm, and Efficient Power Conversion (EPC) are pushing the envelope with new GaN solutions. Infineon's CoolGaN HEMT, offering 100V and 3mΩ specifications, is tailored for robotics, enhancing switching frequency, system efficiency, and power density, while also addressing size and thermal management challenges. EPC's GaN FET series targets medical robots, while Transphorm's GaN FET is powering Yaskawa Electric's new servo motors.
Silicon-based components remain dominant due to their mature development and cost-performance ratio advantages. However, compound semiconductors like GaN and SiC are exceeding market expectations, particularly SiC, which gained traction after being adopted by Tesla for the Model 3 in 2008. This success has spurred global automakers to integrate SiC, fueling the growth of China's supply chain.
While GaN is making inroads into the automotive sector, its progress lags behind SiC, which is better suited for high current and voltage demands. GaN production also faces hurdles such as yield rate control and long-term quality issues, indicating the need for further advancements in manufacturing and quality assurance.
In industrial sectors like data centers and robotics, where high-frequency switching is crucial, GaN is carving out a new niche. This growing demand has sparked a surge in patent disputes, with US-based EPC and Germany's Infineon filing lawsuits against China's GaN leader, Innoscience, in an attempt to slow its international expansion.
GaN's revolution in fast chargers, marked by faster charging speeds and significant reductions in size and weight, has cemented its position from generic to global brands. Innoscience, benefiting from competitive pricing, has dominated the Chinese market and is making strides in international consumer electronics. However, ongoing patent battles are likely to impact its expansion pace.
