Samsung Electronics plans to open its new semiconductor research and development campus in mid-November. The installation of advanced equipment is set to take place from November 2024 onwards, aimed at advancing the development of next-generation 1d DRAM and 3D NAND flash technology. This initiative strategically positions Samsung at the forefront of semiconductor innovation.
According to ZDNet Korea, Samsung plans to launch its "NRD-K" facility in Giheung, South Korea, in late November, marking the start of advanced equipment installations aimed at boosting its semiconductor R&D capabilities.
Samsung Chairman Jae-yong Lee previously visited the NRD-K construction site, underscoring his commitment to the project. As Samsung faces heightened competition in advanced semiconductors, the industry is closely watching the progress and future operations of this R&D campus.
Samsung's NRD-K project, located within the Giheung complex, is designed as an integrated hub for next-generation semiconductor R&D, production, and sales. The company plans to invest KRW20 trillion (about US$14.5 billion) in this facility by 2030, enhancing its competitiveness in semiconductor technology.
In October 2023, Lee inspected the NRD-K site, stressing the critical role of proactive investment to secure Samsung's technological leadership in the face of both internal and external challenges.
By the end of 2023, the NRD-K production line focused on building infrastructure and Phase 1 cleanroom construction. The facility is now prepared to begin equipment installations, marking a major step toward operational readiness.
Industry sources report a slight delay in Samsung's original timeline for equipment installation, initially set for the third quarter of 2024. However, Samsung remains proactive in advancing the NRD-K facility’s operational capabilities by actively sourcing the necessary equipment.
The NRD-K production line aims to strengthen Samsung's position in advanced semiconductor technologies, including Compute Express Link (CXL), Processing in Memory (PIM), silicon photonics (SiPh), backside power delivery network (BSPDN), 3D stacking, and chiplets. Future development at NRD-K is also expected to focus on 1d DRAM and next-generation 3D NAND with over 500 layers (V11, V12).
Next-generation memory development, originally slated for Samsung’s Pyeongtaek campus, is set to transition to the NRD-K facility. Full-scale operations at NRD-K are projected to start in 2025, pending final legal certifications for certain buildings.
