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China breaks ground in GaN: first 8-inch N-polar wafer, 100nm PDK signal high-frequency chip ascent

Levi Li, DIGITIMES Asia, Taipei 0

Credit: AFP

On March 24, 2025, Jiufengshan Laboratory (JFS) announced two major breakthroughs in GaN technology: the world's first 8-inch silicon-based N-polar gallium nitride on insulator (GaNOI) material with high electron mobility, and the debut of China's first...

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