Samsung plans 400+ layer NAND and cutting-edge DRAM for 2026 to reclaim AI memory market

Daniel Chiang, Taipei; Jerry Chen, DIGITIMES Asia Monday 4 November 2024 0

Credit: Samsung

Samsung Electronics is reportedly set to launch high-capacity and high-heat-dissipation Bonding Vertical (BV) NAND Flash with more than 400 layers in 2026. This move aims to enhance its fundamental technological competitiveness and seize opportunities...

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